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Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45AC7496
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Newark | Mosfet, N-Ch, 1.2Kv, 20A, Hip247, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:20A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:20V, Power Dissipation:175W, Msl:-Rohs Compliant: Yes |Stmicroelectronics SCT20N120 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 604 |
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$14.5200 / $18.9100 | Buy Now |
DISTI #
497-15170-ND
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DigiKey | SICFET N-CH 1200V 20A HIP247 Min Qty: 1 Lead time: 41 Weeks Container: Tube |
455 In Stock |
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$11.3411 / $16.4300 | Buy Now |
DISTI #
SCT20N120
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Avnet Americas | Trans MOSFET N-CH 1200V 20A 3-Pin HiP247 Tube - Rail/Tube (Alt: SCT20N120) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 41 Weeks, 0 Days Container: Tube | 0 |
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$10.1059 / $11.4998 | Buy Now |
DISTI #
SCT20N120
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Avnet Americas | Trans MOSFET N-CH 1200V 20A 3-Pin HiP247 Tube - Rail/Tube (Alt: SCT20N120) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 41 Weeks, 0 Days Container: Tube | 0 |
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$10.1059 / $11.4998 | Buy Now |
DISTI #
SCT20N120
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Avnet Americas | Trans MOSFET N-CH 1200V 20A 3-Pin HiP247 Tube - Rail/Tube (Alt: SCT20N120) RoHS: Compliant Container: Tube | 0 |
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RFQ | |
DISTI #
511-SCT20N120
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Mouser Electronics | MOSFET 1200V silicon carbide MOSFET RoHS: Compliant | 0 |
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$11.3500 / $15.1100 | Order Now |
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STMicroelectronics | Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package RoHS: Compliant Min Qty: 1 | 0 |
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$11.1200 / $14.8100 | Buy Now |
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Future Electronics | N-Channel 1200 V 290 mΩ 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™ RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 334Tube |
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$11.1300 / $11.6900 | Buy Now |
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Future Electronics | N-Channel 1200 V 290 mΩ 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™ RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube | 0Tube |
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$11.1300 / $11.6900 | Buy Now |
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Future Electronics | N-Channel 1200 V 290 mΩ 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™ RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube | 0Tube |
|
$11.1300 / $11.3900 | Buy Now |
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SCT20N120
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
SCT20N120
STMicroelectronics
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 41 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 20 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Operating Temperature-Max | 200 °C | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 175 W | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |