Datasheets
SCT2H12NZGC11 by: ROHM Semiconductor

Power Field-Effect Transistor, 3.7A I(D), 1700V, 1.5ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3PFM, 3 PIN

Part Details for SCT2H12NZGC11 by ROHM Semiconductor

Results Overview of SCT2H12NZGC11 by ROHM Semiconductor

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Applications Industrial Automation Automotive Motor control systems

SCT2H12NZGC11 Information

SCT2H12NZGC11 by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SCT2H12NZGC11

Part # Distributor Description Stock Price Buy
DISTI # 79Y4716
Newark Mosfet, N-Ch, 1.7Kv, To-3Pfm, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:3.7A, Drain Source Voltage Vds:1.7Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:18V, Power Dissipation:35W Rohs Compliant: Yes |Rohm SCT2H12NZGC11 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 361
  • 1 $6.3900
  • 10 $6.3600
  • 25 $5.3100
  • 50 $5.1000
  • 100 $4.8700
  • 250 $4.8500
  • 900 $4.1900
$4.1900 / $6.3900 Buy Now
Bristol Electronics   210
RFQ
DISTI # SCT2H12NZGC11
TME Transistor: N-MOSFET, SiC, unipolar, 1.7kV, 3.7A, Idm: 9.2A, 35W Min Qty: 1 0
  • 1 $5.9700
  • 10 $5.1800
  • 30 $4.8200
  • 120 $4.3700
  • 450 $3.9400
  • 510 $3.9100
$3.9100 / $5.9700 RFQ
Ameya Holding Limited SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM Min Qty: 1 30-Authorized Distributor
  • 1 $5.6900
  • 10 $4.7100
  • 120 $4.4900
  • 450 $4.0000
$4.0000 / $5.6900 Buy Now
DISTI # SCT2H12NZGC11
Avnet Asia Trans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube (Alt: SCT2H12NZGC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 40 Weeks, 0 Days 0
RFQ
DISTI # C1S625901603314
Chip1Stop MOSFET Container: Tube 263
  • 1 $6.4700
  • 10 $6.4600
  • 50 $4.3600
  • 200 $3.7400
$3.7400 / $6.4700 Buy Now
CHIPMALL.COM LIMITED 1.7kV 3.7A 35W 1.15@18V,1.1A 1.6V@0.9mA 1 N-Channel TO-3PF-3 MOSFETs ROHS 285
  • 1 $2.9488
  • 10 $2.5675
  • 30 $2.3421
  • 100 $2.1136
  • 500 $2.0077
  • 1,000 $1.9594
$1.9594 / $2.9488 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 1430
  • 1 $9.2000
  • 5 $4.0410
  • 10 $3.3960
  • 30 $2.9660
  • 50 $2.8800
  • 100 $2.8150
$2.8150 / $9.2000 Buy Now
LCSC 1.7kV 3.7A 35W 1.1518V1.1A 1.6V0.9mA 1 N-channel TO-3PF-3 MOSFETs ROHS 125
  • 1 $3.7534
  • 10 $3.2449
  • 30 $2.9426
  • 100 $2.6387
  • 500 $2.4977
  • 1,000 $2.4341
$2.4341 / $3.7534 Buy Now
New Advantage Corporation SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM RoHS: Compliant Min Qty: 1 Package Multiple: 450 16260
  • 450 $3.6300
  • 16,260 $3.3900
$3.3900 / $3.6300 Buy Now
Win Source Electronics MOSFET N-CH 1700V 3.7A 42400
  • 21 $2.4211
  • 45 $2.2649
  • 69 $2.1868
  • 99 $2.0306
  • 129 $1.9525
  • 161 $1.8744
$1.8744 / $2.4211 Buy Now

Part Details for SCT2H12NZGC11

SCT2H12NZGC11 CAD Models

SCT2H12NZGC11 Part Data Attributes

SCT2H12NZGC11 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
SCT2H12NZGC11 ROHM Semiconductor Power Field-Effect Transistor, 3.7A I(D), 1700V, 1.5ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3PFM, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description ROHS COMPLIANT, TO-3PFM, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 27 Weeks
Date Of Intro 2016-02-23
Samacsys Manufacturer ROHM Semiconductor
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1700 V
Drain Current-Max (ID) 3.7 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 9.2 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for SCT2H12NZGC11

This table gives cross-reference parts and alternative options found for SCT2H12NZGC11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCT2H12NZGC11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SCT2H12NZ ROHM Semiconductor Check for Price Power Field-Effect Transistor, SCT2H12NZGC11 vs SCT2H12NZ

SCT2H12NZGC11 Related Parts

SCT2H12NZGC11 Frequently Asked Questions (FAQ)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.

  • The device requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 10uF ceramic capacitor is recommended for CBYP.

  • The maximum power dissipation (PD) is 2.5W. Exceeding this limit may cause the device to overheat and reduce its lifespan.

  • The device is rated for operation up to 125°C (TJ). However, derating is required for temperatures above 85°C to ensure reliable operation.

  • Handle the device with an ESD wrist strap or mat, and ensure the PCB has ESD protection circuits, such as TVS diodes, to prevent damage.

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