| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
67AK5238
|
Newark | Mosfet, N-Ch, 1.2Kv, 31A, To-247 Rohs Compliant: Yes |Rohm SCT3080KRHRC15 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 450 |
|
$12.3200 / $17.1500 | Buy Now | |
|
DISTI #
846-SCT3080KRHRC15-ND
|
DigiKey | 1200V, 31A, 4-PIN THD, TRENCH-ST Min Qty: 1 Lead time: 27 Weeks Container: Tube |
443 In Stock |
|
$7.0975 / $13.8900 | Buy Now | |
|
DISTI #
SCT3080KRHRC15
|
Avnet Americas | Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 104 Milliohms, TO-247, 4 Pins - Rail/Tube (Alt: SCT3080KRHRC15) RoHS: Not Compliant Min Qty: 450 Package Multiple: 450 Lead time: 27 Weeks, 0 Days Container: Tube | 0 |
|
$7.3814 / $8.4034 | Buy Now | |
|
DISTI #
755-SCT3080KRHRC15
|
Mouser Electronics | SiC MOSFETs 1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive RoHS: Compliant | 873 |
|
$7.0900 / $11.9500 | Buy Now | |
| Future Electronics | N-Channel 1200 V 31A (Tc) 165W Through Hole TO-247-4L RoHS: Not Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Lead time: 27 Weeks Container: Tube | 0Tube |
|
$9.8600 | Buy Now | ||
|
DISTI #
SCT3080KRHRC15
|
Avnet Silica | Silicon Carbide MOSFET, Single, N Channel, 31 A, 1.2 kV, 104 Milliohms, TO-247, 4 Pins (Alt: SCT3080KRHRC15) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 31 Weeks, 0 Days | Silica - 0 |
|
Buy Now | ||
|
DISTI #
C1S625902455963
|
Chip1Stop | 1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive RoHS: Compliant pbFree: Yes Container: Tube | 230 |
|
$5.5600 / $9.5600 | Buy Now |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
ROHM CO LTD
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
27 Weeks
|
|
Samacsys Manufacturer
|
ROHM Semiconductor
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
1200 V
|
|
Drain Current-Max (ID)
|
31 A
|
|
Drain-source On Resistance-Max
|
0.104 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
35 pF
|
|
JEDEC-95 Code
|
TO-247
|
|
JESD-30 Code
|
R-PSFM-T4
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
4
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
165 W
|
|
Pulsed Drain Current-Max (IDM)
|
77 A
|
|
Reference Standard
|
AEC-Q101
|
|
Surface Mount
|
NO
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON CARBIDE
|
