-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SCT30N120 by STMicroelectronics
Overview of SCT30N120 by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SCT30N120
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
94X2608
|
Newark | Mosfet, N Ch, 1.2Kv, 40A, Hip247-3, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:40A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:20V, Power Dissipation:270W Rohs Compliant: Yes |Stmicroelectronics SCT30N120 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 280 |
|
$17.7900 / $24.9900 | Buy Now |
|
DISTI #
SCT30N120
|
Avnet Americas | Trans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube - Rail/Tube (Alt: SCT30N120) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 32 Weeks, 0 Days Container: Tube | 0 |
|
$14.1190 / $15.0127 | Buy Now |
|
|
STMicroelectronics | Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package RoHS: Compliant Min Qty: 1 | 716 |
|
$14.5300 / $23.7400 | Buy Now |
|
DISTI #
SCT30N120
|
TME | Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 34A, Idm: 90A, 270W Min Qty: 1 | 0 |
|
$21.0500 / $22.1100 | RFQ |
|
DISTI #
SCT30N120
|
Avnet Silica | Trans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | Silica - 120 |
|
Buy Now | |
|
DISTI #
SCT30N120
|
EBV Elektronik | Trans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 33 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SCT30N120
SCT30N120 CAD Models
SCT30N120 Part Data Attributes
|
|
SCT30N120
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
SCT30N120
STMicroelectronics
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 32 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 40 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 200 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 270 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |