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Transistors / Power Field-Effect Transistors / SCTH35N65G2V-7AG
Datasheets
SCTH35N65G2V-7AG by: STMicroelectronics

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

Part Details for SCTH35N65G2V-7AG by STMicroelectronics

Results Overview of SCTH35N65G2V-7AG by STMicroelectronics

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Applications Energy and Power Systems Renewable Energy

SCTH35N65G2V-7AG Information

SCTH35N65G2V-7AG by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SCTH35N65G2V-7AG

Part # Distributor Description Stock Price Buy
DISTI # 50AJ6008
Newark Mosfet, Sic, 650V, 45A, H2Pak Rohs Compliant: Yes |Stmicroelectronics SCTH35N65G2V-7AG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 949
  • 1 $15.7000
  • 10 $13.6200
  • 25 $13.0400
  • 50 $12.5000
  • 100 $11.9900
$11.9900 / $15.7000 Buy Now
DISTI # SCTH35N65G2V-7AG
Avnet Americas Silicon Carbide MOSFET, Single, N Channel, 45 A, 650 V, 0.045 ohm, H2PAK - Tape and Reel (Alt: SCTH35N65G2V-7AG) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 32 Weeks, 0 Days Container: Reel 0
  • 1,000 $8.3544
  • 2,000 $8.3019
  • 4,000 $8.1481
  • 6,000 $8.0000
  • 8,000 $7.8571
$7.8571 / $8.3544 Buy Now
STMicroelectronics Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package RoHS: Compliant Min Qty: 1 589
  • 1 $14.6100
  • 10 $10.2900
  • 25 $10.2900
  • 50 $10.2900
  • 100 $8.1800
  • 250 $8.1800
  • 500 $8.0900
$8.0900 / $14.6100 Buy Now
DISTI # SCTH35N65G2V-7AG
TME Transistor: N-MOSFET, unipolar Min Qty: 1 0
  • 1 $18.8500
  • 5 $17.8000
  • 25 $15.6900
  • 100 $14.1100
  • 250 $13.1600
  • 1,000 $11.8000
  • 2,000 $11.2700
$11.2700 / $18.8500 RFQ
DISTI # SCTH35N65G2V-7AG
Avnet Silica Silicon Carbide MOSFET, Single, N Channel, 45 A, 650 V, 0.045 ohm, H2PAK (Alt: SCTH35N65G2V-7AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # SCTH35N65G2V-7AG
EBV Elektronik Silicon Carbide MOSFET, Single, N Channel, 45 A, 650 V, 0.045 ohm, H2PAK (Alt: SCTH35N65G2V-7AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 33 Weeks, 0 Days EBV - 0
Buy Now
LCSC H2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS 10
  • 1 $17.8718
  • 30 $17.0448
$17.0448 / $17.8718 Buy Now

Part Details for SCTH35N65G2V-7AG

SCTH35N65G2V-7AG CAD Models

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SCTH35N65G2V-7AG Part Data Attributes

Parametric Data
SCTH35N65G2V-7AG STMicroelectronics
Buy Now Datasheet
Compare Parts:
SCTH35N65G2V-7AG STMicroelectronics Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 32 Weeks
Date Of Intro 2018-10-02
Samacsys Manufacturer STMicroelectronics
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 245
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

SCTH35N65G2V-7AG Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the SCTH35N65G2V-7AG is -40°C to 150°C.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 0V and 650V.

  • The recommended gate resistor value for the SCTH35N65G2V-7AG is between 10Ω and 100Ω, depending on the specific application and switching frequency.

  • To protect the device from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) diode, as well as a current sense resistor and a fuse or a current limiter.

  • The maximum allowable power dissipation for the SCTH35N65G2V-7AG is 150W, depending on the specific application and thermal management.

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