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Transistors / Power Field-Effect Transistors / SCTWA35N65G2V-4
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SCTWA35N65G2V-4 by: STMicroelectronics

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package

Part Details for SCTWA35N65G2V-4 by STMicroelectronics

Overview of SCTWA35N65G2V-4 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SCTWA35N65G2V-4

Part # Distributor Description Stock Price Buy
DISTI # 74AJ1812
Newark Mosfet, Sic, 650V, 45A, Hip247, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:45A, Drain Source Voltage Vds:650V, No. Of Pins:4Pins, Rds(On) Test Voltage:20V, Power Dissipation:240W Rohs Compliant: Yes |Stmicroelectronics SCTWA35N65G2V-4 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 153
  • 1 $7.5700
  • 10 $7.5700
  • 25 $7.5700
  • 60 $7.5700
  • 120 $7.5700
  • 270 $7.5700
  • 510 $7.5700
$7.5700 Buy Now
DISTI # 497-SCTWA35N65G2V-4-ND
DigiKey DISCRETE Min Qty: 1 Lead time: 32 Weeks Container: Bulk 600
In Stock
  • 1 $15.8000
  • 10 $13.9200
  • 100 $12.0392
  • 600 $10.9105
$10.9105 / $15.8000 Buy Now
DISTI # 74AJ1812
Avnet Americas Transistor MOSFET N-CH 650V 45A 3-Pin HiP247 Tube - Bulk (Alt: 74AJ1812) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 56 Partner Stock
  • 1 $17.3800
  • 10 $16.3800
  • 25 $15.9700
  • 60 $14.6000
  • 120 $13.8700
$13.8700 / $17.3800 Buy Now
DISTI # SCTWA35N65G2V-4
Avnet Americas Transistor MOSFET N-CH 650V 45A 3-Pin HiP247 Tube - Rail/Tube (Alt: SCTWA35N65G2V-4) RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Lead time: 32 Weeks, 0 Days Container: Tube 0
  • 600 $8.2695
$8.2695 Buy Now
DISTI # 511-SCTWA35N65G2V-4
Mouser Electronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package RoHS: Compliant 0
  • 600 $10.9100
$10.9100 Order Now
Future Electronics SCTWA35N Series 650 V 67 mOhm 1 N-Ch Silicon Carbide Power MOSFET - HiP247-4 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 32 Weeks Container: Tube 510
Tube
  • 30 $10.9500
  • 60 $10.8900
  • 120 $10.8300
  • 150 $10.8100
  • 450 $10.7000
$10.7000 / $10.9500 Buy Now
Future Electronics SCTWA35N Series 650 V 67 mOhm 1 N-Ch Silicon Carbide Power MOSFET - HiP247-4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 32 Weeks Container: Bulk 10
Bulk
  • 1 $11.2400
  • 5 $11.0900
  • 25 $10.9600
  • 75 $10.8600
  • 200 $10.7000
$10.7000 / $11.2400 Buy Now
Future Electronics SCTWA35N Series 650 V 67 mOhm 1 N-Ch Silicon Carbide Power MOSFET - HiP247-4 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 32 Weeks Container: Tube 0
Tube
  • 30 $10.9500
  • 60 $10.8900
  • 120 $10.8300
  • 150 $10.8100
  • 450 $10.7000
$10.7000 / $10.9500 Buy Now
Future Electronics SCTWA35N Series 650 V 67 mOhm 1 N-Ch Silicon Carbide Power MOSFET - HiP247-4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 30 Lead time: 32 Weeks Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $11.2400
  • 3 $11.0600
  • 4 $11.0100
  • 10 $10.8700
  • 15 $10.7000
$10.7000 / $11.2400 Buy Now
Future Electronics SCTWA35N Series 650 V 67 mOhm 1 N-Ch Silicon Carbide Power MOSFET - HiP247-4 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 32 Weeks Container: Tube 0
Tube
  • 30 $10.9500
  • 60 $10.8900
  • 120 $10.8300
  • 150 $10.8100
  • 450 $10.7000
$10.7000 / $10.9500 Buy Now
DISTI # 69739545
Verical Trans MOSFET N-CH SiC 650V 45A 4-Pin(4+Tab) HIP-247 Tube Min Qty: 1 Package Multiple: 1 Date Code: 2326 Americas - 595
  • 1 $9.8690
  • 10 $9.4310
  • 25 $9.3370
  • 60 $8.9120
  • 120 $8.8230
  • 270 $8.7830
  • 510 $8.5250
$8.5250 / $9.8690 Buy Now
DISTI # 83139094
Verical Trans MOSFET N-CH SiC 650V 45A 4-Pin(4+Tab) HIP-247 Tube Min Qty: 7 Package Multiple: 1 Americas - 56
  • 7 $11.5573
  • 25 $11.0236
  • 50 $10.5801
$10.5801 / $11.5573 Buy Now
DISTI # SCTWA35N65G2V-4
TME Transistor: N-MOSFET, unipolar Min Qty: 1 0
  • 1 $21.6600
  • 3 $20.4300
  • 10 $18.0900
  • 30 $16.1900
  • 120 $15.1800
  • 300 $14.6300
  • 900 $14.0700
  • 1,800 $13.6200
$13.6200 / $21.6600 RFQ
DISTI # SCTWA35N65G2V-4
Avnet Silica (Alt: SCTWA35N65G2V-4) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S730201838790
Chip1Stop MOSFET RoHS: Compliant 595
  • 1 $10.5000
$10.5000 Buy Now
DISTI # SCTWA35N65G2V-4
EBV Elektronik (Alt: SCTWA35N65G2V-4) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 33 Weeks, 0 Days EBV - 90
Buy Now
LCSC HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS 1
  • 1 $24.8811
  • 30 $23.9247
$23.9247 / $24.8811 Buy Now

Part Details for SCTWA35N65G2V-4

SCTWA35N65G2V-4 CAD Models

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SCTWA35N65G2V-4 Part Data Attributes

Parametric Data
SCTWA35N65G2V-4 STMicroelectronics
Buy Now Datasheet
Compare Parts:
SCTWA35N65G2V-4 STMicroelectronics Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer STMicroelectronics
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 45 A
Drain-source On Resistance-Max 0.067 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 30 pF
JESD-30 Code R-PSFM-T4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 240 W
Pulsed Drain Current-Max (IDM) 90 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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