Datasheets
SEMIX151GD066HDS by: SEMIKRON

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 13S, 20 PIN

Part Details for SEMIX151GD066HDS by SEMIKRON

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Price & Stock for SEMIX151GD066HDS

Part # Distributor Description Stock Price Buy
DISTI # 16M0095
Newark Igbt Module, Six, 600V, 200A, Continuous Collector Current:200A, Collector Emitter Saturation Voltage:1.45V, Power Dissipation:-, Operating Temperature Max:125°C, Igbt Termination:Stud, Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SEMIX151GD066HDS Min Qty: 4 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $140.9000
  • 5 $137.1000
  • 10 $133.2900
  • 25 $131.3800
  • 50 $129.4800
  • 100 $121.8600
$121.8600 / $140.9000 Buy Now
DISTI # SEMIX151GD066HDS
TME Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 0
  • 1 $536.0400
  • 2 $471.8900
  • 4 $422.9600
  • 8 $395.7800
  • 16 $367.5100
$367.5100 / $536.0400 RFQ
DISTI # SEMIX151GD066HX
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ

Part Details for SEMIX151GD066HDS

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SEMIX151GD066HDS Part Data Attributes:

SEMIX151GD066HDS SEMIKRON
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SEMIX151GD066HDS SEMIKRON Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 13S, 20 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description FLANGE MOUNT, R-XUFM-P20
Pin Count 20
Manufacturer Package Code CASE SEMIX 13S
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 600 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-P20
JESD-609 Code e3/e4
Number of Elements 6
Number of Terminals 20
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN/SILVER
Terminal Form PIN/PEG
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 425 ns
Turn-on Time-Nom (ton) 180 ns
VCEsat-Max 1.85 V

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