Datasheets
SEMIX151GD126HDS by: SEMIKRON

Insulated Gate Bipolar Transistor, 170A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 13S, 20 PIN

Part Details for SEMIX151GD126HDS by SEMIKRON

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Price & Stock for SEMIX151GD126HDS

Part # Distributor Description Stock Price Buy
DISTI # 16M0096
Newark Igbt Module, Six, 1.2Kv, 168A, Continuous Collector Current:168A, Collector Emitter Saturation Voltage:1.7V, Power Dissipation:-, Operating Temperature Max:125°C, Igbt Termination:Stud, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX151GD126HDS Min Qty: 4 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $174.4000
  • 5 $171.9600
  • 10 $169.5200
  • 25 $159.7600
$159.7600 / $174.4000 Buy Now
DISTI # SEMIX151GD126HDS
TME Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 0
  • 1 $687.1800
  • 2 $603.4600
  • 4 $542.5700
  • 8 $506.6900
  • 16 $469.7200
$469.7200 / $687.1800 RFQ
DISTI # SEMIX151GD126HS
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ

Part Details for SEMIX151GD126HDS

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SEMIX151GD126HDS Part Data Attributes:

SEMIX151GD126HDS SEMIKRON
Buy Now Datasheet
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SEMIX151GD126HDS SEMIKRON Insulated Gate Bipolar Transistor, 170A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 13S, 20 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description FLANGE MOUNT, R-XUFM-X20
Pin Count 20
Manufacturer Package Code CASE SEMIX 13S
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 170 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X20
JESD-609 Code e3/e4
Number of Elements 6
Number of Terminals 20
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN/SILVER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 715 ns
Turn-on Time-Nom (ton) 340 ns
VCEsat-Max 2.1 V

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