Datasheets
SEMIX302GB066HDS by: SEMIKRON

Insulated Gate Bipolar Transistor, 270A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN

Part Details for SEMIX302GB066HDS by SEMIKRON

Overview of SEMIX302GB066HDS by SEMIKRON

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Price & Stock for SEMIX302GB066HDS

Part # Distributor Description Stock Price Buy
DISTI # 16M0107
Newark Igbt Module, Dual, 600V, 379A, Continuous Collector Current:379A, Collector Emitter Saturation Voltage:1.45V, Power Dissipation:-, Operating Temperature Max:125°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SEMIX302GB066HDS Min Qty: 6 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 5 $104.0600
  • 10 $101.1700
  • 25 $99.7200
  • 50 $98.2800
  • 100 $92.4900
$92.4900 / $104.0600 Buy Now
DISTI # SEMIX302GB066HDS
TME Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 300A Min Qty: 1 0
  • 1 $369.7800
  • 3 $325.5800
  • 6 $292.1600
  • 12 $263.0500
$263.0500 / $369.7800 RFQ

Part Details for SEMIX302GB066HDS

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SEMIX302GB066HDS Part Data Attributes:

SEMIX302GB066HDS SEMIKRON
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SEMIX302GB066HDS SEMIKRON Insulated Gate Bipolar Transistor, 270A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description FLANGE MOUNT, R-XUFM-X15
Pin Count 15
Manufacturer Package Code CASE SEMIX 2S
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 270 A
Collector-Emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X15
JESD-609 Code e3/e4
Number of Elements 2
Number of Terminals 15
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN/SILVER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 702 ns
Turn-on Time-Nom (ton) 190 ns
VCEsat-Max 1.85 V

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