Part Details for SEMIX603GAL066HDS by SEMIKRON
Overview of SEMIX603GAL066HDS by SEMIKRON
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for SEMIX603GAL066HDS
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
77R2140
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Newark | Igbt Module, Single, 600V, 720A, Continuous Collector Current:720A, Collector Emitter Saturation Voltage:1.45V, Power Dissipation:-, Operating Temperature Max:125°C, Igbt Termination:Stud, Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SEMIX603GAL066HDS RoHS: Compliant Min Qty: 6 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$133.3800 / $150.0500 | Buy Now |
DISTI #
SEMIX603GAL066HDS
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TME | Module: IGBT, diode/transistor, boost chopper,thermistor, screw Min Qty: 1 | 0 |
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$340.5200 / $478.9600 | RFQ |
Part Details for SEMIX603GAL066HDS
SEMIX603GAL066HDS CAD Models
SEMIX603GAL066HDS Part Data Attributes
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SEMIX603GAL066HDS
SEMIKRON
Buy Now
Datasheet
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SEMIX603GAL066HDS
SEMIKRON
Insulated Gate Bipolar Transistor, 720A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 3S, 18 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
Package Description | FLANGE MOUNT, R-XUFM-X18 | |
Pin Count | 18 | |
Manufacturer Package Code | CASE SEMIX 3S | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 720 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X18 | |
Number of Elements | 1 | |
Number of Terminals | 18 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 1155 ns | |
Turn-on Time-Nom (ton) | 295 ns | |
VCEsat-Max | 1.85 V |