Part Details for SEMIX653GAL176HDS by SEMIKRON
Overview of SEMIX653GAL176HDS by SEMIKRON
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SEMIX653GAL176HDS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
77R2149
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Newark | Igbt Module, Single, 1.7Kv, 619A, Continuous Collector Current:619A, Collector Emitter Saturation Voltage:2V, Power Dissipation:-, Operating Temperature Max:150°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:1.7Kv Rohs Compliant: Yes |Semikron SEMIX653GAL176HDS Min Qty: 6 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$173.0900 / $186.3000 | Buy Now |
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DISTI #
SEMIX653GAL176HDS
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TME | Module: IGBT, diode/transistor, boost chopper,thermistor, screw Min Qty: 1 | 0 |
|
$483.8700 / $680.8800 | RFQ |
Part Details for SEMIX653GAL176HDS
SEMIX653GAL176HDS CAD Models
SEMIX653GAL176HDS Part Data Attributes:
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SEMIX653GAL176HDS
SEMIKRON
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Datasheet
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SEMIX653GAL176HDS
SEMIKRON
Insulated Gate Bipolar Transistor, 620A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 3S, 18 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
| Package Description | FLANGE MOUNT, R-XUFM-X18 | |
| Pin Count | 18 | |
| Manufacturer Package Code | CASE SEMIX 3S | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 620 A | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X18 | |
| Number of Elements | 1 | |
| Number of Terminals | 18 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1165 ns | |
| Turn-on Time-Nom (ton) | 380 ns | |
| VCEsat-Max | 2.45 V |