Part Details for SGB07N120 by Infineon Technologies AG
Overview of SGB07N120 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for SGB07N120
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SGB07N120
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EBV Elektronik | Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin TO-263 T/R (Alt: SGB07N120) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 3 Weeks, 5 Days | EBV - 0 |
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Part Details for SGB07N120
SGB07N120 CAD Models
SGB07N120 Part Data Attributes
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SGB07N120
Infineon Technologies AG
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Datasheet
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SGB07N120
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 16.5A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 16.5 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 61 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 24 ns | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 520 ns | |
| Turn-on Time-Nom (ton) | 56 ns |
Alternate Parts for SGB07N120
This table gives cross-reference parts and alternative options found for SGB07N120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGB07N120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | SGB07N120 vs SGP13N60UF |
| HGTP12N60A4 | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN | Fairchild Semiconductor Corporation | SGB07N120 vs HGTP12N60A4 |
| HGT1S12N60C3DR | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel | Harris Semiconductor | SGB07N120 vs HGT1S12N60C3DR |
| HGTP12N60C3 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, | Fairchild Semiconductor Corporation | SGB07N120 vs HGTP12N60C3 |
| HGT1S3N60C3D | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-262AA | Harris Semiconductor | SGB07N120 vs HGT1S3N60C3D |
| HGTG20N100D2 | Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247 | Harris Semiconductor | SGB07N120 vs HGTG20N100D2 |
| HGT1S12N60A4DS9A | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB | Fairchild Semiconductor Corporation | SGB07N120 vs HGT1S12N60A4DS9A |
| IRG4PC30W | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | SGB07N120 vs IRG4PC30W |
| IRG4PC30KDPBF | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | SGB07N120 vs IRG4PC30KDPBF |
| FGH40N6S2D | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | Fairchild Semiconductor Corporation | SGB07N120 vs FGH40N6S2D |