Part Details for SGB10N60 by Siemens
Overview of SGB10N60 by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for SGB10N60
SGB10N60 CAD Models
SGB10N60 Part Data Attributes
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SGB10N60
Siemens
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Datasheet
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SGB10N60
Siemens
Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-263AB
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS, FAST | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 21 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 329 ns | |
Turn-on Time-Nom (ton) | 46 ns |
Alternate Parts for SGB10N60
This table gives cross-reference parts and alternative options found for SGB10N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGB10N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HGT1S12N60B3DS | 27A, 600V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | SGB10N60 vs HGT1S12N60B3DS |
HGTG30N120CN | 30A, 1200V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | SGB10N60 vs HGTG30N120CN |
HGTG27N120BN | Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | Fairchild Semiconductor Corporation | SGB10N60 vs HGTG27N120BN |
IRG4IBC30KDPBF | Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PAK-3 | International Rectifier | SGB10N60 vs IRG4IBC30KDPBF |
SGP04N60 | Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Siemens | SGB10N60 vs SGP04N60 |
SKW30N60FKSA1 | Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SGB10N60 vs SKW30N60FKSA1 |
IRG4PH30KPBF | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | SGB10N60 vs IRG4PH30KPBF |
IRG4PF50WDPBF | Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | SGB10N60 vs IRG4PF50WDPBF |
IRG4PSC71KPBF | Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, SUPER-247, 3 PIN | International Rectifier | SGB10N60 vs IRG4PSC71KPBF |
GT80J101 | TRANSISTOR 80 A, 600 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | SGB10N60 vs GT80J101 |