Part Details for SGB20N60ATMA1 by Infineon Technologies AG
Overview of SGB20N60ATMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for SGB20N60ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | SGB20N60 - Discrete IGBT without Anti-Parallel Diode RoHS: Compliant Status: Active Min Qty: 1 | 16870 |
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$0.7189 / $0.8458 | Buy Now |
Part Details for SGB20N60ATMA1
SGB20N60ATMA1 CAD Models
SGB20N60ATMA1 Part Data Attributes:
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SGB20N60ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SGB20N60ATMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 40 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 313 ns | |
| Turn-on Time-Nom (ton) | 66 ns |
Alternate Parts for SGB20N60ATMA1
This table gives cross-reference parts and alternative options found for SGB20N60ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGB20N60ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGB20N60 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3 | Infineon Technologies AG | SGB20N60ATMA1 vs SGB20N60 |
| SGB20N60 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB | Siemens | SGB20N60ATMA1 vs SGB20N60 |