Datasheets
SGB30N60 by:

Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-263AB

Part Details for SGB30N60 by Siemens

Overview of SGB30N60 by Siemens

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Applications Industrial Automation

Price & Stock for SGB30N60

Part # Distributor Description Stock Price Buy
Quest Components 41 A, 600 V, N-CHANNEL IGBT, TO-263AB 70
  • 1 $4.5675
  • 3 $3.0450
  • 9 $2.2838
$2.2838 / $4.5675 Buy Now

Part Details for SGB30N60

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SGB30N60 Part Data Attributes:

SGB30N60 Siemens
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SGB30N60 Siemens Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, FAST
Case Connection COLLECTOR
Collector Current-Max (IC) 41 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 391 ns
Turn-on Time-Nom (ton) 76 ns

Alternate Parts for SGB30N60

This table gives cross-reference parts and alternative options found for SGB30N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGB30N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SGW20N60FKSA1 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG SGB30N60 vs SGW20N60FKSA1
SKW30N60FKSA1 Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SGB30N60 vs SKW30N60FKSA1
HGT1S12N60C3DS 24A, 600V, N-CHANNEL IGBT, TO-263AB, TO-263AB, 3 PIN Intersil Corporation SGB30N60 vs HGT1S12N60C3DS
SGW20N60 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG SGB30N60 vs SGW20N60
HGTG40N60B3 70A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation SGB30N60 vs HGTG40N60B3
IRG4PC30FDPBF Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier SGB30N60 vs IRG4PC30FDPBF
HGT1S12N60A4DS9A 54A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation SGB30N60 vs HGT1S12N60A4DS9A
HGTP3N60C3D 6A, 600V, N-CHANNEL IGBT, TO-220AB Intersil Corporation SGB30N60 vs HGTP3N60C3D
HGT1S7N60C3DS 14A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation SGB30N60 vs HGT1S7N60C3DS
SKW30N60 Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SGB30N60 vs SKW30N60

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