Transistors
SGW23N60UFTM
Fairchild Semiconductor Corporation
Description: Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3

Overview of SGW23N60UFTM by Fairchild Semiconductor Corporation

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  • Number of FFF Equivalents: ( 0 replacements )
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  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

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Part Data Attributes for SGW23N60UFTM by Fairchild Semiconductor Corporation

SGW23N60UFTM
Fairchild Semiconductor Corporation
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-263
Package Description
D2PAK-3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Case Connection
COLLECTOR
Collector Current-Max (IC)
23 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE
Fall Time-Max (tf)
220 ns
Gate-Emitter Thr Voltage-Max
7.5 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
100 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
320 ns
Turn-on Time-Nom (ton)
55 ns
Want to compare parts?
  1. SGW23N60UFTM
    Fairchild Semiconductor Corporation
    Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3
    VS

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