Datasheets
SH8K25GZ0TB1 by: ROHM Semiconductor

Power Field-Effect Transistor, 5.2A I(D), 40V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for SH8K25GZ0TB1 by ROHM Semiconductor

Overview of SH8K25GZ0TB1 by ROHM Semiconductor

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Applications Space Technology Aerospace and Defense

Price & Stock for SH8K25GZ0TB1

Part # Distributor Description Stock Price Buy
DISTI # 33AK7076
Newark Mosfet, Dual N-Ch, 40V, 3W, Sop Rohs Compliant: Yes |Rohm SH8K25GZ0TB1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2410
  • 1 $0.8530
  • 10 $0.6980
  • 25 $0.6460
  • 50 $0.5940
  • 100 $0.5420
  • 250 $0.5010
  • 500 $0.4600
  • 1,000 $0.4540
$0.4540 / $0.8530 Buy Now
DISTI # 846-SH8K25GZ0TB1CT-ND
DigiKey MOSFET 2N-CH 40V 5.2A 8SOP Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 17345
In Stock
  • 1 $0.8200
  • 10 $0.6710
  • 100 $0.5218
  • 500 $0.4423
  • 1,000 $0.4375
  • 2,500 $0.4375
$0.4375 / $0.8200 Buy Now
DISTI # SH8K25GZ0TB1
Avnet Americas Transistor MOSFET Array Dual N-Channel 40V 5.2A 8-Pin SOP Emboss T/R - Tape and Reel (Alt: SH8K25GZ0TB1) Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.5180
  • 5,000 $0.5075
  • 10,000 $0.4970
  • 15,000 $0.4865
  • 20,000 $0.4760
  • 25,000 $0.4655
  • 250,000 $0.4550
$0.4550 / $0.5180 Buy Now
DISTI # 755-SH8K25GZ0TB1
Mouser Electronics MOSFET LOW POWER MOSFET RoHS: Compliant 7213
  • 1 $1.1700
  • 10 $0.9540
  • 100 $0.7430
  • 500 $0.6300
  • 1,000 $0.5530
  • 2,500 $0.4700
  • 10,000 $0.4460
$0.4460 / $1.1700 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel 0
Reel
  • 2,500 $0.4610
$0.4610 Buy Now
Quest Components   1748
  • 1 $1.3400
  • 300 $0.5360
  • 1,494 $0.4690
$0.4690 / $1.3400 Buy Now
DISTI # SH8K25GZ0TB1
TTI MOSFET LOW POWER MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 0
  • 2,500 $0.4380
$0.4380 Buy Now
Ameya Holding Limited   Min Qty: 1 2480-Authorized Distributor
  • 1 $1.1000
  • 10 $0.9870
  • 100 $0.7790
  • 500 $0.6360
  • 2,500 $0.4580
$0.4580 / $1.1000 Buy Now
DISTI # SH8K25GZ0TB1
Avnet Asia Transistor MOSFET Array Dual N-Channel 40V 5.2A 8-Pin SOP Emboss T/R (Alt: SH8K25GZ0TB1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # SH8K25GZ0TB1
Avnet Silica Transistor MOSFET Array Dual N-Channel 40V 5.2A 8-Pin SOP Emboss T/R (Alt: SH8K25GZ0TB1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 23 Weeks, 0 Days Silica - 0
Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 2186
  • 1 $1.0450
  • 10 $0.6090
  • 50 $0.3830
  • 100 $0.3310
  • 500 $0.2790
  • 1,000 $0.2680
$0.2680 / $1.0450 Buy Now

Part Details for SH8K25GZ0TB1

SH8K25GZ0TB1 CAD Models

SH8K25GZ0TB1 Part Data Attributes

SH8K25GZ0TB1 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
SH8K25GZ0TB1 ROHM Semiconductor Power Field-Effect Transistor, 5.2A I(D), 40V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ROHM CO LTD
Package Description SOP-8
Reach Compliance Code compliant
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 0.48 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 5.2 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF
JESD-30 Code R-PDSO-G8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 8 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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