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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SH8K39GZETBCT-ND
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DigiKey | MOSFET 2N-CH 60V 8A 8SOP Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$0.9011 / $2.0800 | Buy Now |
DISTI #
SH8K39GZETB
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 13A 8-Pin SOP Emboss T/R - Tape and Reel (Alt: SH8K39GZETB) Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
$0.9061 / $1.0316 | Buy Now |
DISTI #
755-SH8K39GZETB
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Mouser Electronics | MOSFET 4V Drive Nch+Nch MOSFET. SH8K39 is a power MOSFET with low-on resistance and High power package (SOP8), suitable for switching and motor drive. RoHS: Compliant | 0 |
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$0.9000 / $2.0700 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.9300 | Buy Now |
DISTI #
SH8K39GZETB
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 13A 8-Pin SOP Emboss T/R - Tape and Reel (Alt: SH8K39GZETB) Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
$0.9061 / $1.0316 | Buy Now |
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Ameya Holding Limited | Transistors FETs, MOSFETs Arrays Min Qty: 1 | 20-Authorized Distributor |
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$0.7700 / $2.4000 | Buy Now |
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SH8K39GZETB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
SH8K39GZETB
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 26 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SH8K39GZETB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SH8K39GZETB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SH8K39TB | Power Field-Effect Transistor, | ROHM Semiconductor | SH8K39GZETB vs SH8K39TB |