Part Details for SH8KA2GZETB by ROHM Semiconductor
Overview of SH8KA2GZETB by ROHM Semiconductor
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SH8KA2GZETB
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SH8KA2GZETBCT-ND
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DigiKey | MOSFET 2N-CH 30V 8A 8SOP Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2503 In Stock |
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$0.4932 / $1.3800 | Buy Now |
DISTI #
SH8KA2GZETB
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin SOP Emboss T/R - Tape and Reel (Alt: SH8KA2GZETB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.5382 / $0.6127 | Buy Now |
DISTI #
755-SH8KA2GZETB
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Mouser Electronics | MOSFET 30V Nch+Nch Si MOSFET RoHS: Compliant | 2485 |
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$0.5170 / $1.3700 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks Container: Reel | 0Reel |
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$0.5450 | Buy Now |
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Quest Components | 1555 |
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$0.6108 / $1.7450 | Buy Now | |
DISTI #
SH8KA2GZETB
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TME | Transistor: N-MOSFET x2, unipolar, 30V, 8A, Idm: 16A, 2.8W, SOP8 Min Qty: 1 | 0 |
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$0.3180 / $0.7630 | RFQ |
DISTI #
SH8KA2GZETB
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Avnet Silica | Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin SOP Emboss T/R (Alt: SH8KA2GZETB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 23 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2020 Date Code: 2020 | 1944 |
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$0.3490 / $0.8860 | Buy Now |
Part Details for SH8KA2GZETB
SH8KA2GZETB CAD Models
SH8KA2GZETB Part Data Attributes
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SH8KA2GZETB
ROHM Semiconductor
Buy Now
Datasheet
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SH8KA2GZETB
ROHM Semiconductor
Power Field-Effect Transistor, 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 2.6 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |