-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SH8KA4TBCT-ND
|
DigiKey | MOSFET 2N-CH 30V 9A 8SOP Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
41283 In Stock |
|
$0.3412 / $1.0400 | Buy Now |
DISTI #
SH8KA4TB
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 9A 8-Pin SOP Emboss T/R - Tape and Reel (Alt: SH8KA4TB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel | 0 |
|
$0.3549 / $0.4040 | Buy Now |
DISTI #
755-SH8KA4TB
|
Mouser Electronics | MOSFETs 30V Nch+Nch Si MOSFET RoHS: Compliant | 1324 |
|
$0.3410 / $0.7400 | Buy Now |
|
Future Electronics | SH8KA4 Series 30 V 9 A 21.4 mOhm Dual N-Channel Power Mosfet - SOP-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 0Reel |
|
$0.3600 | Buy Now |
|
Quest Components | 2801 |
|
$0.4305 / $1.2300 | Buy Now | |
DISTI #
SH8KA4TB
|
TME | Transistor: N-MOSFET x2, unipolar, 30V, 9A, Idm: 18A, 3W, SOP8 Min Qty: 1 | 0 |
|
$0.2710 / $0.8840 | RFQ |
DISTI #
SH8KA4TB
|
Avnet Silica | Transistor MOSFET Array Dual N-CH 30V 9A 8-Pin SOP Emboss T/R (Alt: SH8KA4TB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 23 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
DISTI #
C1S625901680687
|
Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 9187 |
|
$0.2440 / $0.6140 | Buy Now |
|
CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 | 1990 |
|
$0.2460 / $0.6810 | Buy Now |
|
CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2021 Date Code: 2021 | 1522 |
|
$0.2460 / $0.6810 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SH8KA4TB
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
SH8KA4TB
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 21 Weeks | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 4.6 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 21.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |