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Part Details for SI2301CDS-T1-E3 by Vishay Intertechnologies
Results Overview of SI2301CDS-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI2301CDS-T1-E3 Information
SI2301CDS-T1-E3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SI2301CDS-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97W2628
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Newark | Mosfet Transistor, P Channel, -3.1 A, -20 V, 0.11 Ohm, -2.5 V, -400 Mv Rohs Compliant: Yes |Vishay SI2301CDS-T1-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 466 |
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$0.1180 / $0.1280 | Buy Now |
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DISTI #
SI2301CDS-T1-E3
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Avnet Americas | P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2301CDS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 12000 |
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$0.0781 / $0.0884 | Buy Now |
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DISTI #
SI2301CDS-T1-E3
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Avnet Americas | P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2301CDS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 2728 |
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$0.0708 | Buy Now |
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DISTI #
97W2628
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Avnet Americas | P-CHANNEL 20-V (D-S) MOSFET - Bulk (Alt: 97W2628) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk | 466 Partner Stock |
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$0.1860 / $0.5240 | Buy Now |
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Bristol Electronics | 4368 |
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RFQ | ||
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Future Electronics | P-CHANNEL 20-V (D-S) MOSFET Min Qty: 3000 Package Multiple: 3000 |
6000 null |
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$0.0909 / $0.0971 | Buy Now |
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DISTI #
SI2301CDS-T1-E3
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Avnet Asia | P-CHANNEL 20-V (D-S) MOSFET (Alt: SI2301CDS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
SI2301CDS-T1-E3
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EBV Elektronik | PCHANNEL 20V DS MOSFET (Alt: SI2301CDS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 20V 3.1A 112m4.5V2.8A 1V 1 piece P-channel SOT-23 MOSFETs ROHS | 180 |
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$0.1290 / $0.2685 | Buy Now |
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Vyrian | Transistors | 53367 |
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RFQ |
Part Details for SI2301CDS-T1-E3
SI2301CDS-T1-E3 CAD Models
SI2301CDS-T1-E3 Part Data Attributes
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SI2301CDS-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2301CDS-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-236, SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 4 Days | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.1 A | |
| Drain-source On Resistance-Max | 0.112 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 55 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI2301CDS-T1-E3
This table gives cross-reference parts and alternative options found for SI2301CDS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2301CDS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI2301BDS-T1-E3 | Vishay Intertechnologies | $0.1678 | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | SI2301CDS-T1-E3 vs SI2301BDS-T1-E3 |
SI2301CDS-T1-E3 Frequently Asked Questions (FAQ)
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A good PCB layout for the SI2301CDS-T1-E3 should include a large copper area for heat dissipation, with multiple vias connecting the top and bottom layers to reduce thermal resistance. A minimum of 2 oz copper thickness is recommended.
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To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
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The SI2301CDS-T1-E3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap or mat, and follow standard ESD handling procedures to prevent damage to the device.
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The SI2301CDS-T1-E3 is a commercial-grade device, but Vishay Intertechnologies offers other versions of this device that are specifically designed for high-reliability and aerospace applications. Contact Vishay's sales team for more information on these specialized products.
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Follow the recommended soldering and rework conditions outlined in the datasheet, which include a peak temperature of 260°C for a maximum of 10 seconds. Use a soldering iron with a temperature range of 200°C to 240°C, and avoid using excessive force or pressure during rework.