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Transistors / Small Signal Field-Effect Transistors / SI2308BDS-T1-E3
Datasheets
SI2308BDS-T1-E3 by:

Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236,

Part Details for SI2308BDS-T1-E3 by Vishay Intertechnologies

Results Overview of SI2308BDS-T1-E3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI2308BDS-T1-E3 Information

SI2308BDS-T1-E3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI2308BDS-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 69W7187
Newark Mosfet, N Channel, 60V, 2.3A, Sot-23-3, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V, Msl:- Rohs Compliant: Yes |Vishay SI2308BDS-T1-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 45289
  • 1 $0.2020
  • 10 $0.2020
  • 25 $0.2020
  • 50 $0.2020
  • 100 $0.2020
$0.2020 Buy Now
DISTI # 33P5172
Newark Mosfet, N Channel, 60V, 2.3A, Sot-23-3, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:1.66W, Msl:- Rohs Compliant: Yes |Vishay SI2308BDS-T1-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.1960
  • 5,000 $0.1910
  • 10,000 $0.1770
  • 20,000 $0.1650
  • 30,000 $0.1540
  • 50,000 $0.1470
$0.1470 / $0.1960 Buy Now
DISTI # SI2308BDS-T1-E3
Avnet Americas N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI2308BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 6000
  • 3,000 $0.1500
  • 6,000 $0.1476
  • 12,000 $0.1453
  • 18,000 $0.1429
  • 24,000 $0.1412
$0.1412 / $0.1500 Buy Now
DISTI # 69W7187
Avnet Americas N-CHANNEL 60-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 69W7187) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack 36798 Partner Stock
  • 1 $0.5800
  • 10 $0.4170
  • 25 $0.3750
  • 50 $0.3330
  • 100 $0.2910
$0.2910 / $0.5800 Buy Now
Bristol Electronics   3727
RFQ
DISTI # SI2308BDS-T1-E3
TME Transistor: N-MOSFET, unipolar, 60V, 2.3A, Idm: 8A, 1.06W, SOT23 Min Qty: 1 2215
  • 1 $0.5510
  • 20 $0.4050
  • 100 $0.3030
  • 250 $0.2560
  • 500 $0.2290
  • 1,000 $0.2050
  • 3,000 $0.1760
  • 6,000 $0.1620
  • 9,000 $0.1560
  • 15,000 $0.1540
$0.1540 / $0.5510 Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 1095
RFQ
DISTI # SI2308BDS-T1-E3
EBV Elektronik N-CHANNEL 60-V (D-S) MOSFET (Alt: SI2308BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 7 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 2.3A 1.09W 0.15610V2.3A 3V 1 N-channel SOT-23 MOSFETs ROHS 2600
  • 5 $0.3226
  • 50 $0.2532
  • 150 $0.2212
  • 500 $0.1841
  • 3,000 $0.1676
  • 6,000 $0.1577
$0.1577 / $0.3226 Buy Now

Part Details for SI2308BDS-T1-E3

SI2308BDS-T1-E3 CAD Models

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SI2308BDS-T1-E3 Part Data Attributes

Parametric Data
SI2308BDS-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2308BDS-T1-E3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236,
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 0.156 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.66 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2308BDS-T1-E3

This table gives cross-reference parts and alternative options found for SI2308BDS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2308BDS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI2308BDS-T1-BE3 Vishay Intertechnologies Check for Price Small Signal Field-Effect Transistor, SI2308BDS-T1-E3 vs SI2308BDS-T1-BE3
SI2308BDS-T1-E3 Vishay Siliconix Check for Price TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, SSOT-23, 3 PIN, FET General Purpose Small Signal SI2308BDS-T1-E3 vs SI2308BDS-T1-E3
SI2308BDS-T1-GE3 Vishay Siliconix Check for Price TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal SI2308BDS-T1-E3 vs SI2308BDS-T1-GE3
SI2308DS-T1-GE3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN SI2308BDS-T1-E3 vs SI2308DS-T1-GE3
IRFL014NPBF Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 SI2308BDS-T1-E3 vs IRFL014NPBF
SI2308DS-T1-E3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, TO-236, 3 PIN SI2308BDS-T1-E3 vs SI2308DS-T1-E3
SI2308DS-T1 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN SI2308BDS-T1-E3 vs SI2308DS-T1
RSR020N06HZGTL ROHM Semiconductor $0.3554 Small Signal Field-Effect Transistor, SI2308BDS-T1-E3 vs RSR020N06HZGTL

SI2308BDS-T1-E3 Related Parts

SI2308BDS-T1-E3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI2308BDS-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.

  • To ensure proper biasing, connect the VCC pin to a stable 2.5V to 5.5V power supply, and the GND pin to a solid ground plane. The EN pin should be tied to VCC or a digital signal for enable/disable functionality.

  • The maximum current rating for the SI2308BDS-T1-E3 is 1.5A per channel, with a total current limit of 3A for all three channels combined.

  • To protect the SI2308BDS-T1-E3 from ESD and overvoltage, use a TVS diode or a zener diode on the input pins, and consider adding a series resistor to limit the current in case of an overvoltage event.

  • The operating temperature range for the SI2308BDS-T1-E3 is -40°C to 125°C, with a storage temperature range of -55°C to 150°C.

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