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Transistors / Small Signal Field-Effect Transistors / SI2309CDS-T1-GE3
Datasheets
SI2309CDS-T1-GE3 by:

Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SOT-23, TO-236, 3 PIN

Part Details for SI2309CDS-T1-GE3 by Vishay Intertechnologies

Results Overview of SI2309CDS-T1-GE3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI2309CDS-T1-GE3 Information

SI2309CDS-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI2309CDS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 96AJ0108
Newark Mosfet, P-Ch, 60V, 1.6A, Sot-23 Rohs Compliant: Yes |Vishay SI2309CDS-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 45000
  • 3,000 $0.2470
  • 6,000 $0.2380
  • 12,000 $0.2300
  • 18,000 $0.2260
  • 30,000 $0.2240
$0.2240 / $0.2470 Buy Now
DISTI # 69W7188
Newark Mosfet, P Channel, -60V, -1.6A, Sot-23-3, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:1.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI2309CDS-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 4383
  • 1 $0.2020
  • 10 $0.2020
  • 25 $0.2020
  • 50 $0.2020
  • 100 $0.2020
$0.2020 Buy Now
DISTI # SI2309CDS-T1-GE3
Avnet Americas Power MOSFET, P Channel, 60 V, 1.6 A, 345 Milliohms, SOT-23 (TO-236), 3 Pins, Surface Mount - Tape and Reel (Alt: SI2309CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel 15000
  • 3,000 $0.1500
$0.1500 Buy Now
DISTI # 69W7188
Avnet Americas Power MOSFET, P Channel, 60 V, 1.6 A, 345 Milliohms, SOT-23 (TO-236), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 69W7188) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 7 Weeks, 4 Days Container: Ammo Pack 4358 Partner Stock
  • 1 $0.5300
  • 10 $0.4280
  • 25 $0.3890
  • 50 $0.3510
  • 100 $0.3120
$0.3120 / $0.5300 Buy Now
DISTI # SI2309CDS-T1-GE3
TME Transistor: P-MOSFET, unipolar, -60V, -1.3A, 1.1W, SOT23 Min Qty: 1 7969
  • 1 $0.7480
  • 5 $0.5390
  • 10 $0.4670
  • 50 $0.3940
  • 100 $0.3020
  • 500 $0.2310
  • 1,000 $0.2080
  • 3,000 $0.1830
  • 6,000 $0.1760
$0.1760 / $0.7480 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 54000
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # SMC-SI2309CDS-T1-GE3
Sensible Micro Corporation OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 2803
RFQ
Chip 1 Exchange INSTOCK 2741183
RFQ
DISTI # SI2309CDS-T1-GE3
Avnet Asia Power MOSFET, P Channel, 60 V, 1.6 A, 345 Milliohms, SOT-23 (TO-236), 3 Pins, Surface Mount (Alt: SI2309CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days 0
RFQ
Chip-Germany GmbH   RoHS: Not Compliant 32
RFQ
CHIPMALL.COM LIMITED 60V 1.6A 0.345@10V,1.25A 1W 1V@250uA 1 Piece P-Channel SOT-23-3TO-236-3 MOSFETs ROHS 218037
  • 1 $0.1555
  • 10 $0.1404
  • 30 $0.1304
  • 100 $0.1153
  • 500 $0.1083
  • 1,000 $0.1033
$0.1033 / $0.1555 Buy Now
DISTI # SI2309CDS-T1-GE3
EBV Elektronik Power MOSFET, P Channel, 60 V, 1.6 A, 345 Milliohms, SOT-23 (TO-236), 3 Pins, Surface Mount (Alt: SI2309CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 7 Weeks, 0 Days EBV - 900000
Buy Now
LCSC 60V 1.6A 0.34510V1.25A 1W 1V250uA 1 Piece P-Channel SOT-23-3 MOSFETs ROHS 9193
  • 5 $0.1184
  • 50 $0.0926
  • 150 $0.0800
  • 500 $0.0687
  • 3,000 $0.0656
  • 6,000 $0.0638
$0.0638 / $0.1184 Buy Now
LCSC 60V 1.6A 0.34510V1.25A 1W 1V250uA 1 Piece P-Channel SOT-23-3(TO-236-3) MOSFETs ROHS 191
  • 1 $0.3431
  • 10 $0.2738
  • 30 $0.2439
  • 100 $0.2077
  • 500 $0.1841
  • 1,000 $0.1747
$0.1747 / $0.3431 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 31500
  • 3,000 $0.1300
  • 6,000 $0.1200
  • 9,000 $0.1000
$0.1000 / $0.1300 Buy Now
Wuhan P&S 345m��,-60V,-1.6A,P-Channel Power MOSFET Min Qty: 1 1716000
  • 1 $0.0600
  • 100 $0.0600
  • 500 $0.0600
  • 1,000 $0.0600
$0.0600 Buy Now

Part Details for SI2309CDS-T1-GE3

SI2309CDS-T1-GE3 CAD Models

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SI2309CDS-T1-GE3 Part Data Attributes

Parametric Data
SI2309CDS-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2309CDS-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SOT-23, TO-236, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOT-23, TO-236, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 1.6 A
Drain-source On Resistance-Max 0.345 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 20 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.7 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2309CDS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2309CDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2309CDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
RQ5L015SPTL ROHM Semiconductor $0.2584 Small Signal Field-Effect Transistor, 1.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSMT3, 3 PIN SI2309CDS-T1-GE3 vs RQ5L015SPTL
SQ2309ES-T1_GE3 Vishay Intertechnologies $0.2390 Small Signal Field-Effect Transistor, 1.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 SI2309CDS-T1-GE3 vs SQ2309ES-T1_GE3

SI2309CDS-T1-GE3 Related Parts

SI2309CDS-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI2309CDS-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.

  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source, and the enable pin (EN) to a logic-level signal. The output pin (VOUT) should be decoupled with a 10 μF ceramic capacitor.

  • The SI2309CDS-T1-GE3 is rated for operation in an ambient temperature range of -40°C to +125°C.

  • Yes, the SI2309CDS-T1-GE3 is qualified to AEC-Q100, making it suitable for high-reliability applications such as automotive and industrial systems.

  • To calculate power dissipation, use the formula: Pd = (VIN - VOUT) x IOUT. Ensure the calculated power dissipation does not exceed the maximum rating of 1.5 W.

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