Part Details for SI2316BDS-T1-E3 by Vishay Intertechnologies
Overview of SI2316BDS-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI2316BDS-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
75M5444
|
Newark | N-Channel 30-V (D-S) Mosfet |Vishay SI2316BDS-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1980 / $0.2640 | Buy Now |
|
DISTI #
SI2316BDS-T1-E3
|
Avnet Americas | Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2316BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.1765 / $0.2372 | Buy Now |
|
DISTI #
SI2316BDS-T1-E3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 4.5A, Idm: 20A Min Qty: 1 | 0 |
|
$0.2700 / $0.5260 | RFQ |
|
DISTI #
SI2316BDS-T1-E3
|
EBV Elektronik | Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R (Alt: SI2316BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SI2316BDS-T1-E3
SI2316BDS-T1-E3 CAD Models
SI2316BDS-T1-E3 Part Data Attributes
|
|
SI2316BDS-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI2316BDS-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-236, SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 37 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.66 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 28.5 ns | |
| Turn-on Time-Max (ton) | 23.25 ns |
Alternate Parts for SI2316BDS-T1-E3
This table gives cross-reference parts and alternative options found for SI2316BDS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2316BDS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI2316BDS-T1-GE3 | Vishay Intertechnologies | $0.4102 | Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | SI2316BDS-T1-E3 vs SI2316BDS-T1-GE3 |