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Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85W2139
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Newark | Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:3.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:800Mv, Power Dissipation:960Mw, No. Of Pins:3Pins Rohs Compliant: Yes |Vishay SI2316DS-T1-E3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.7060 | Buy Now |
DISTI #
06J7579
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Newark | N Channel Mosfet, 30V, 3.4A, To-236, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:3.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:700Mw Rohs Compliant: Yes |Vishay SI2316DS-T1-E3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4790 / $0.5660 | Buy Now |
DISTI #
SI2316DS-T1-E3
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Avnet Americas | Trans MOSFET N-CH 30V 2.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2316DS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 15000 |
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$0.4235 / $0.4500 | Buy Now |
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Bristol Electronics | 1009 |
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RFQ | ||
DISTI #
SI2316DS-T1-E3
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TME | Transistor: N-MOSFET, unipolar, 30V, 2.3A, 0.45W, SOT23 Min Qty: 1 | 2237 |
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$0.2860 / $0.6900 | Buy Now |
DISTI #
SI2316DS-T1-E3
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Avnet Asia | Trans MOSFET N-CH 30V 2.9A 3-Pin TO-236 T/R (Alt: SI2316DS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | 0 |
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RFQ | |
DISTI #
SI2316DS-T1-E3
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EBV Elektronik | Trans MOSFET N-CH 30V 2.9A 3-Pin TO-236 T/R (Alt: SI2316DS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 7 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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SI2316DS-T1-E3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SI2316DS-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 2.9 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.96 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI2316DS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2316DS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
SI2316DS-T1-E3 | Vishay Siliconix | Check for Price | TRANSISTOR 2900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal | SI2316DS-T1-E3 vs SI2316DS-T1-E3 |