Datasheets
SI2318DS-T1-E3 by:

Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN

Part Details for SI2318DS-T1-E3 by Vishay Intertechnologies

Results Overview of SI2318DS-T1-E3 by Vishay Intertechnologies

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SI2318DS-T1-E3 Information

SI2318DS-T1-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI2318DS-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 06J7580
Newark N Channel Mosfet, 40V, 3.9A, To-236, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:3.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI2318DS-T1-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 10935
  • 1 $0.5120
$0.5120 Buy Now
DISTI # 85W0176
Newark N Channel Mosfet, 40V, 3.9A, To-236, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:3.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3Vrohs Compliant: Yes |Vishay SI2318DS-T1-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.5000
  • 2 $0.4870
  • 4 $0.4740
  • 6 $0.4610
  • 10 $0.4480
$0.4480 / $0.5000 Buy Now
DISTI # SI2318DS-T1-E3
Avnet Americas Trans MOSFET N-CH 40V 3A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2318DS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 21000
  • 3,000 $0.1540
  • 6,000 $0.1414
  • 12,000 $0.1392
  • 18,000 $0.1369
  • 24,000 $0.1353
$0.1353 / $0.1540 Buy Now
DISTI # 06J7580
Avnet Americas Trans MOSFET N-CH 40V 3A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 06J7580) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 4 Days Container: Ammo Pack 0
  • 1 $0.5120
  • 10 $0.4470
  • 25 $0.4100
  • 50 $0.3740
  • 100 $0.3370
$0.3370 / $0.5120 Buy Now
Bristol Electronics   70
RFQ
DISTI # SI2318DS-T1-E3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 40V, 3A, Idm: 16A, 750mW Min Qty: 3 0
  • 3 $0.3690
  • 25 $0.3320
  • 100 $0.2930
  • 500 $0.2630
  • 3,000 $0.2450
$0.2450 / $0.3690 RFQ
Chip-Germany GmbH   RoHS: Not Compliant 233
RFQ
CHIPMALL.COM LIMITED 40V 3.9A 1.25W 0.045@10V,3.9A 3V@250uA 1 N-Channel SOT-23 MOSFETs ROHS 2137
  • 1 $0.3356
  • 10 $0.3098
  • 30 $0.3046
  • 100 $0.2891
$0.2891 / $0.3356 Buy Now
DISTI # SI2318DS-T1-E3
EBV Elektronik Trans MOSFET N-CH 40V 3A 3-Pin TO-236 T/R (Alt: SI2318DS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 40V 3.9A 1.25W 0.04510V3.9A 3V250uA 1 N-channel SOT-23 MOSFETs ROHS 1076
  • 1 $0.3328
  • 10 $0.2672
  • 30 $0.2391
  • 100 $0.2047
  • 500 $0.1875
  • 1,000 $0.1782
$0.1782 / $0.3328 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 9800
  • 3,000 $0.1700
  • 9,000 $0.1500
$0.1500 / $0.1700 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 3000
  • 3,000 $0.2548
$0.2548 Buy Now

Part Details for SI2318DS-T1-E3

SI2318DS-T1-E3 CAD Models

SI2318DS-T1-E3 Part Data Attributes

SI2318DS-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2318DS-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-236, SOT-23, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 45 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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