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Part Details for SI2318DS-T1-E3 by Vishay Intertechnologies
Results Overview of SI2318DS-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI2318DS-T1-E3 Information
SI2318DS-T1-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI2318DS-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06J7580
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Newark | N Channel Mosfet, 40V, 3.9A, To-236, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:3.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI2318DS-T1-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 10935 |
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$0.5120 | Buy Now |
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DISTI #
85W0176
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Newark | N Channel Mosfet, 40V, 3.9A, To-236, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:3.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3Vrohs Compliant: Yes |Vishay SI2318DS-T1-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4480 / $0.5000 | Buy Now |
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DISTI #
SI2318DS-T1-E3
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Avnet Americas | Trans MOSFET N-CH 40V 3A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2318DS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 21000 |
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$0.1353 / $0.1540 | Buy Now |
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DISTI #
06J7580
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Avnet Americas | Trans MOSFET N-CH 40V 3A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 06J7580) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 4 Days Container: Ammo Pack | 0 |
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$0.3370 / $0.5120 | Buy Now |
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Bristol Electronics | 70 |
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RFQ | ||
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DISTI #
SI2318DS-T1-E3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 40V, 3A, Idm: 16A, 750mW Min Qty: 3 | 0 |
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$0.2450 / $0.3690 | RFQ |
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Chip-Germany GmbH | RoHS: Not Compliant | 233 |
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RFQ | |
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CHIPMALL.COM LIMITED | 40V 3.9A 1.25W 0.045@10V,3.9A 3V@250uA 1 N-Channel SOT-23 MOSFETs ROHS | 2137 |
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$0.2891 / $0.3356 | Buy Now |
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DISTI #
SI2318DS-T1-E3
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EBV Elektronik | Trans MOSFET N-CH 40V 3A 3-Pin TO-236 T/R (Alt: SI2318DS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 40V 3.9A 1.25W 0.04510V3.9A 3V250uA 1 N-channel SOT-23 MOSFETs ROHS | 1076 |
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$0.1782 / $0.3328 | Buy Now |
Part Details for SI2318DS-T1-E3
SI2318DS-T1-E3 CAD Models
SI2318DS-T1-E3 Part Data Attributes
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SI2318DS-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2318DS-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-236, SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 45 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |