Datasheets
SI2319CDS-T1-GE3 by:

TRANSISTOR 4400 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal

Part Details for SI2319CDS-T1-GE3 by Vishay Siliconix

Overview of SI2319CDS-T1-GE3 by Vishay Siliconix

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Price & Stock for SI2319CDS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 70459504
RS SI2319CDS-T1-GE3 P-channel MOSFET Transistor, 4.4 A, 40 V, 3-Pin SOT-23 | Siliconix / Vishay SI2319CDS-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $0.4720
$0.4720 RFQ
New Advantage Corporation P-Channel 40 V 0.077 Ohm 2.5 W Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 585000
  • 3,000 $0.2057
  • 585,000 $0.1920
$0.1920 / $0.2057 Buy Now

Part Details for SI2319CDS-T1-GE3

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SI2319CDS-T1-GE3 Part Data Attributes

SI2319CDS-T1-GE3 Vishay Siliconix
Buy Now Datasheet
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SI2319CDS-T1-GE3 Vishay Siliconix TRANSISTOR 4400 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 4.4 A
Drain-source On Resistance-Max 0.077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 61 pF
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 47 ns
Turn-on Time-Max (ton) 101 ns

Alternate Parts for SI2319CDS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2319CDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2319CDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
TPCP8109 Toshiba America Electronic Components Check for Price Pch Power MOSFET SI2319CDS-T1-GE3 vs TPCP8109
SI2319CDS-T1-GE3 Vishay Intertechnologies $0.3047 Small Signal Field-Effect Transistor, 4.4A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 SI2319CDS-T1-GE3 vs SI2319CDS-T1-GE3

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