Datasheets
SI2319CDS-T1-GE3 by:

TRANSISTOR 4400 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal

Part Details for SI2319CDS-T1-GE3 by Vishay Siliconix

Results Overview of SI2319CDS-T1-GE3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI2319CDS-T1-GE3 Information

SI2319CDS-T1-GE3 by Vishay Siliconix is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI2319CDS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 70459504
RS SI2319CDS-T1-GE3 P-channel MOSFET Transistor, 4.4 A, 40 V, 3-Pin SOT-23 | Siliconix / Vishay SI2319CDS-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $0.4720
$0.4720 RFQ
New Advantage Corporation P-Channel 40 V 0.077 Ohm 2.5 W Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 573000
  • 3,000 $0.2186
  • 573,000 $0.2040
$0.2040 / $0.2186 Buy Now

Part Details for SI2319CDS-T1-GE3

SI2319CDS-T1-GE3 CAD Models

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SI2319CDS-T1-GE3 Part Data Attributes

SI2319CDS-T1-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI2319CDS-T1-GE3 Vishay Siliconix TRANSISTOR 4400 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 4.4 A
Drain-source On Resistance-Max 0.077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 61 pF
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 47 ns
Turn-on Time-Max (ton) 101 ns

Alternate Parts for SI2319CDS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2319CDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2319CDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PJA3441-AU_R1_000A1 PanJit Semiconductor $0.1422 Power Field-Effect Transistor, SI2319CDS-T1-GE3 vs PJA3441-AU_R1_000A1
SI2319CDS-T1-GE3 Vishay Intertechnologies $0.3121 Small Signal Field-Effect Transistor, 4.4A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 SI2319CDS-T1-GE3 vs SI2319CDS-T1-GE3
SI2319DS-T1-E3 Vishay Intertechnologies $0.4405 Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN SI2319CDS-T1-GE3 vs SI2319DS-T1-E3
SI2319DS-T1-BE3 Vishay Intertechnologies Check for Price Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN SI2319CDS-T1-GE3 vs SI2319DS-T1-BE3
SI2319DS-T1-GE3 Vishay Intertechnologies $0.3900 Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN SI2319CDS-T1-GE3 vs SI2319DS-T1-GE3
SI2319DS-T1-GE3 Vishay Siliconix Check for Price TRANSISTOR 2300 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal SI2319CDS-T1-GE3 vs SI2319DS-T1-GE3
SI2319DS-T1-E3 Vishay Siliconix Check for Price TRANSISTOR 2300 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal SI2319CDS-T1-GE3 vs SI2319DS-T1-E3
PJA3441_R1_00001 PanJit Semiconductor Check for Price Power Field-Effect Transistor, 3.1A I(D), 40V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 SI2319CDS-T1-GE3 vs PJA3441_R1_00001
AP2321GN-HF Advanced Power Electronics Corp Check for Price TRANSISTOR 3.1 A, 40 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power SI2319CDS-T1-GE3 vs AP2321GN-HF

SI2319CDS-T1-GE3 Related Parts

SI2319CDS-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI2319CDS-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.

  • To ensure the SI2319CDS-T1-GE3 operates within its recommended operating conditions, maintain a supply voltage between 2.7V and 5.5V, and keep the junction temperature (TJ) below 150°C. Also, ensure the device is operated within its specified frequency range of 100 kHz to 5 MHz.

  • The maximum allowable power dissipation for the SI2319CDS-T1-GE3 is 250mW. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.

  • To prevent electrostatic discharge (ESD) damage, handle the SI2319CDS-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Also, avoid touching the device's pins or handling it in environments with high electrostatic potential.

  • Store the SI2319CDS-T1-GE3 in a dry, cool place with a temperature range of -40°C to 125°C and relative humidity below 60%. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures during storage.

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