Datasheets
SI2333DS-T1-E3 by:

TRANSISTOR 4100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal

Part Details for SI2333DS-T1-E3 by Vishay Siliconix

Overview of SI2333DS-T1-E3 by Vishay Siliconix

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Price & Stock for SI2333DS-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 70026098
RS MOSFET, Power, P-Ch, VDSS -12V, RDS(ON) 0.025Ohm, ID -4.1A, TO-236 (SOT-23),PD 0.75W | Siliconix / Vishay SI2333DS-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $0.8000
$0.8000 RFQ
Chip 1 Exchange INSTOCK 30303
RFQ
New Advantage Corporation Single P-Channel 12 V 0.032 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 12000
  • 3,000 $0.4214
  • 12,000 $0.3933
$0.3933 / $0.4214 Buy Now

Part Details for SI2333DS-T1-E3

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SI2333DS-T1-E3 Part Data Attributes

SI2333DS-T1-E3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI2333DS-T1-E3 Vishay Siliconix TRANSISTOR 4100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 4.1 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 300 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2333DS-T1-E3

This table gives cross-reference parts and alternative options found for SI2333DS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2333DS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI2333DS-T1-GE3 Vishay Intertechnologies $51.4139 Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN SI2333DS-T1-E3 vs SI2333DS-T1-GE3
Part Number Manufacturer Composite Price Description Compare
SI2333DS-T1-GE3 Vishay Siliconix Check for Price TRANSISTOR 4100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal SI2333DS-T1-E3 vs SI2333DS-T1-GE3
SI2333DS-T1-BE3 Vishay Intertechnologies Check for Price Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN SI2333DS-T1-E3 vs SI2333DS-T1-BE3
SI2333DS Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN SI2333DS-T1-E3 vs SI2333DS
RZR040P01TL ROHM Semiconductor $0.3510 Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN SI2333DS-T1-E3 vs RZR040P01TL
RAF040P01TCL ROHM Semiconductor $0.3045 Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT3, 3 PIN SI2333DS-T1-E3 vs RAF040P01TCL

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