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Transistors / Small Signal Field-Effect Transistors / SI2356DS-T1-GE3
Datasheets
SI2356DS-T1-GE3 by:

Small Signal Field-Effect Transistor, 4.3A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN

Part Details for SI2356DS-T1-GE3 by Vishay Intertechnologies

Results Overview of SI2356DS-T1-GE3 by Vishay Intertechnologies

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SI2356DS-T1-GE3 Information

SI2356DS-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

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SN65LVCP1414RLJT Texas Instruments 14.2-GBPS Quad Channel, Dual Mode Linear Equalizer 38-WQFN -40 to 85

Price & Stock for SI2356DS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 01AC4982
Newark Mosfet, N-Ch, 40V, 4.3A, Sot-23, Transistor Polarity:N Channel, Continuous Drain Current Id:4.3A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.042Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.5V, Power Rohs Compliant: Yes |Vishay SI2356DS-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 31494
  • 1 $0.4560
  • 10 $0.2810
  • 25 $0.2450
  • 50 $0.2090
  • 100 $0.1730
$0.1730 / $0.4560 Buy Now
DISTI # 05AC9483
Newark Mosfet, N-Ch, 40V, 4.3A, Sot-23, Transistor Polarity:N Channel, Continuous Drain Current Id:4.3A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.042Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.5V, Power Rohs Compliant: Yes |Vishay SI2356DS-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 12000
  • 3,000 $0.1180
  • 6,000 $0.1130
  • 12,000 $0.1080
$0.1080 / $0.1180 Buy Now
DISTI # SI2356DS-T1-GE3
Avnet Americas Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2356DS-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel 3000
  • 6,000 $0.0870
  • 12,000 $0.0814
  • 18,000 $0.0801
  • 30,000 $0.0788
  • 60,000 $0.0779
$0.0779 / $0.0870 Buy Now
Bristol Electronics   50
RFQ
DISTI # SI2356DS-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 40V, 4.3A, Idm: 20A Min Qty: 1 5471
  • 1 $0.3620
  • 10 $0.2660
  • 25 $0.2120
  • 100 $0.1490
  • 250 $0.1320
  • 500 $0.1180
  • 1,000 $0.1070
  • 3,000 $0.1020
  • 9,000 $0.0990
$0.0990 / $0.3620 Buy Now
Chip 1 Exchange INSTOCK 81521
RFQ
DISTI # SI2356DS-T1-GE3
Avnet Asia Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days 0
RFQ
CHIPMALL.COM LIMITED 40V 4.3A 0.07@2.5V,2A 960mW 1.5V@250uA 1 N-Channel SOT-23 MOSFETs ROHS 9816
  • 1 $0.1747
  • 100 $0.1514
  • 1,000 $0.1390
  • 3,000 $0.1271
$0.1271 / $0.1747 Buy Now
DISTI # SI2356DS-T1-GE3
EBV Elektronik Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 7 Weeks, 0 Days EBV - 0
Buy Now
LCSC 40V 4.3A 0.072.5V2A 960mW 1.5V250uA 1 N-channel SOT-23 MOSFETs ROHS 1384
  • 1 $0.3259
  • 10 $0.2605
  • 30 $0.2278
  • 100 $0.2032
  • 500 $0.1836
  • 1,000 $0.1738
$0.1738 / $0.3259 Buy Now
Wuhan P&S 40V,51m��,4.3A,N-Channel Power MOSFET Min Qty: 1 18000
  • 1 $0.8900
  • 100 $0.3000
  • 500 $0.2800
  • 1,000 $0.2700
$0.2700 / $0.8900 Buy Now

Part Details for SI2356DS-T1-GE3

SI2356DS-T1-GE3 CAD Models

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SI2356DS-T1-GE3 Part Data Attributes

Parametric Data
SI2356DS-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2356DS-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 4.3A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-236, SOT-23, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 6 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.051 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 17 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.7 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

SI2356DS-T1-GE3 Related Parts

SI2356DS-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI2356DS-T1-GE3 is a standard SO-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note AN-10365.

  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, consider using a thermal pad or heat sink to dissipate heat, and ensure good airflow around the device.

  • The maximum allowed voltage on the enable pin (EN) of the SI2356DS-T1-GE3 is 6V. Exceeding this voltage may damage the device.

  • Yes, the SI2356DS-T1-GE3 is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's requirements are within the device's specifications.

  • The SI2356DS-T1-GE3 requires a specific power sequencing to ensure proper operation. It is recommended to power up the VIN pin before the VCC pin, and power down the VCC pin before the VIN pin.

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