Datasheets
SI3457CDV-T1-GE3 by:

Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

Part Details for SI3457CDV-T1-GE3 by Vishay Intertechnologies

Results Overview of SI3457CDV-T1-GE3 by Vishay Intertechnologies

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SI3457CDV-T1-GE3 Information

SI3457CDV-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI3457CDV-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 1840420
Farnell MOSFET,P CH,30V,5.1A,TSOP6 RoHS: Compliant Min Qty: 5 Lead time: 19 Weeks, 1 Days Container: Cut Tape 6284
  • 5 $0.4429
  • 50 $0.3758
  • 100 $0.3073
  • 500 $0.2128
  • 1,500 $0.2090
$0.2090 / $0.4429 Buy Now
DISTI # 1840420RL
Farnell MOSFET,P CH,30V,5.1A,TSOP6 RoHS: Compliant Min Qty: 100 Lead time: 19 Weeks, 1 Days Container: Reel 6284
  • 100 $0.3073
  • 500 $0.2128
  • 1,500 $0.2090
$0.2090 / $0.3073 Buy Now
DISTI # 2361872
Farnell MOSFET,P CH,30V,5.1A,TSOP6 RoHS: Compliant Min Qty: 3000 Lead time: 19 Weeks, 1 Days Container: Reel 3000
  • 3,000 $0.1680
  • 9,000 $0.1642
$0.1642 / $0.1680 Buy Now
DISTI # SI3457CDV-T1-GE3
Avnet Americas P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI3457CDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 57000
  • 3,000 $0.1157
  • 6,000 $0.1142
  • 12,000 $0.1123
  • 18,000 $0.1103
  • 24,000 $0.1083
$0.1083 / $0.1157 Buy Now
DISTI # SI3457CDV-T1-GE3
TME Transistor: P-MOSFET, unipolar, -30V, -4.1A, 2W, TSOP6 Min Qty: 1 1416
  • 1 $0.4780
  • 50 $0.3420
  • 100 $0.2920
  • 500 $0.2060
  • 1,000 $0.1840
  • 1,500 $0.1740
  • 3,000 $0.1620
  • 6,000 $0.1540
$0.1540 / $0.4780 Buy Now
DISTI # SI3457CDV-T1-GE3
EBV Elektronik PCHANNEL 30V DS MOSFET (Alt: SI3457CDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 4.1A 0.07410V4.1A 2W 3V 1 piece P-channel TSOP-6-1.5mm MOSFETs ROHS 2075
  • 5 $0.1326
  • 50 $0.1050
  • 150 $0.0912
  • 500 $0.0809
  • 3,000 $0.0726
  • 6,000 $0.0685
$0.0685 / $0.1326 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 11956
  • 3,000 $0.0900
  • 6,000 $0.0800
$0.0800 / $0.0900 Buy Now

Part Details for SI3457CDV-T1-GE3

SI3457CDV-T1-GE3 CAD Models

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SI3457CDV-T1-GE3 Part Data Attributes

SI3457CDV-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI3457CDV-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.1 A
Drain-source On Resistance-Max 0.074 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 63 pF
JEDEC-95 Code MO-193AA
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 3 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI3457CDV-T1-GE3

This table gives cross-reference parts and alternative options found for SI3457CDV-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3457CDV-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PMN34LN Nexperia Check for Price Small Signal Field-Effect Transistor SI3457CDV-T1-GE3 vs PMN34LN
PMWD26UN,518 NXP Semiconductors Check for Price PMWD26UN SI3457CDV-T1-GE3 vs PMWD26UN,518
2N3921 Crimson Semiconductor Inc Check for Price Small Signal Field-Effect Transistor, N-Channel, Silicon, Junction FET, TO-71, TO-71, 8 PIN SI3457CDV-T1-GE3 vs 2N3921
PMN34UN,135 NXP Semiconductors Check for Price N-channel TrenchMOS ultra low level FET TSOP 6-Pin SI3457CDV-T1-GE3 vs PMN34UN,135
PMN27UN,135 NXP Semiconductors Check for Price N-channel TrenchMOS ultra low level FET TSOP 6-Pin SI3457CDV-T1-GE3 vs PMN27UN,135
FDS6990AS Fairchild Semiconductor Corporation Check for Price 30V Dual N-Channel PowerTrench® SyncFET™, 8LD, JEDEC MS-012, .150"NARROW BODY, 2500/TAPE REEL SI3457CDV-T1-GE3 vs FDS6990AS
ZXMP3A17E6TA Diodes Incorporated $0.3681 Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN SI3457CDV-T1-GE3 vs ZXMP3A17E6TA
FDS6990AL86Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 SI3457CDV-T1-GE3 vs FDS6990AL86Z
NDH8501NX Texas Instruments Check for Price 2800mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-8 SI3457CDV-T1-GE3 vs NDH8501NX
FDR8305N Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 SI3457CDV-T1-GE3 vs FDR8305N

SI3457CDV-T1-GE3 Related Parts

SI3457CDV-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended land pattern for the SI3457CDV-T1-GE3 can be found in the Vishay Intertechnologies' application note AN-1033, which provides guidelines for PCB layout and land pattern design.

  • To ensure reliability in high-temperature applications, follow the recommended derating guidelines for the device, and consider using thermal management techniques such as heat sinks or thermal interfaces to reduce the junction temperature.

  • The maximum allowable power dissipation for the SI3457CDV-T1-GE3 is dependent on the ambient temperature and the thermal resistance of the device. Refer to the datasheet for the power dissipation curves and thermal resistance values.

  • Yes, the SI3457CDV-T1-GE3 is suitable for high-frequency switching applications. However, ensure that the device is operated within its recommended frequency range and that the PCB layout is optimized for high-frequency operation.

  • To handle ESD protection for the SI3457CDV-T1-GE3, follow the recommended ESD handling procedures, and consider using ESD protection devices or circuits in the system design.

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