Part Details for SI3457CDV-T1-GE3 by Vishay Intertechnologies
Results Overview of SI3457CDV-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI3457CDV-T1-GE3 Information
SI3457CDV-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI3457CDV-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
1840420
|
Farnell | MOSFET,P CH,30V,5.1A,TSOP6 RoHS: Compliant Min Qty: 5 Lead time: 19 Weeks, 1 Days Container: Cut Tape | 6284 |
|
$0.2090 / $0.4429 | Buy Now |
DISTI #
1840420RL
|
Farnell | MOSFET,P CH,30V,5.1A,TSOP6 RoHS: Compliant Min Qty: 100 Lead time: 19 Weeks, 1 Days Container: Reel | 6284 |
|
$0.2090 / $0.3073 | Buy Now |
DISTI #
2361872
|
Farnell | MOSFET,P CH,30V,5.1A,TSOP6 RoHS: Compliant Min Qty: 3000 Lead time: 19 Weeks, 1 Days Container: Reel | 3000 |
|
$0.1642 / $0.1680 | Buy Now |
DISTI #
SI3457CDV-T1-GE3
|
Avnet Americas | P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI3457CDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 57000 |
|
$0.1083 / $0.1157 | Buy Now |
DISTI #
SI3457CDV-T1-GE3
|
TME | Transistor: P-MOSFET, unipolar, -30V, -4.1A, 2W, TSOP6 Min Qty: 1 | 1416 |
|
$0.1540 / $0.4780 | Buy Now |
DISTI #
SI3457CDV-T1-GE3
|
EBV Elektronik | PCHANNEL 30V DS MOSFET (Alt: SI3457CDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
LCSC | 30V 4.1A 0.07410V4.1A 2W 3V 1 piece P-channel TSOP-6-1.5mm MOSFETs ROHS | 2075 |
|
$0.0685 / $0.1326 | Buy Now |
|
MacroQuest Electronics | ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 | 11956 |
|
$0.0800 / $0.0900 | Buy Now |
Part Details for SI3457CDV-T1-GE3
SI3457CDV-T1-GE3 CAD Models
SI3457CDV-T1-GE3 Part Data Attributes
|
SI3457CDV-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI3457CDV-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5.1 A | |
Drain-source On Resistance-Max | 0.074 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 63 pF | |
JEDEC-95 Code | MO-193AA | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI3457CDV-T1-GE3
This table gives cross-reference parts and alternative options found for SI3457CDV-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3457CDV-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
PMN34LN | Nexperia | Check for Price | Small Signal Field-Effect Transistor | SI3457CDV-T1-GE3 vs PMN34LN |
PMWD26UN,518 | NXP Semiconductors | Check for Price | PMWD26UN | SI3457CDV-T1-GE3 vs PMWD26UN,518 |
2N3921 | Crimson Semiconductor Inc | Check for Price | Small Signal Field-Effect Transistor, N-Channel, Silicon, Junction FET, TO-71, TO-71, 8 PIN | SI3457CDV-T1-GE3 vs 2N3921 |
PMN34UN,135 | NXP Semiconductors | Check for Price | N-channel TrenchMOS ultra low level FET TSOP 6-Pin | SI3457CDV-T1-GE3 vs PMN34UN,135 |
PMN27UN,135 | NXP Semiconductors | Check for Price | N-channel TrenchMOS ultra low level FET TSOP 6-Pin | SI3457CDV-T1-GE3 vs PMN27UN,135 |
FDS6990AS | Fairchild Semiconductor Corporation | Check for Price | 30V Dual N-Channel PowerTrench® SyncFET™, 8LD, JEDEC MS-012, .150"NARROW BODY, 2500/TAPE REEL | SI3457CDV-T1-GE3 vs FDS6990AS |
ZXMP3A17E6TA | Diodes Incorporated | $0.3681 | Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN | SI3457CDV-T1-GE3 vs ZXMP3A17E6TA |
FDS6990AL86Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | SI3457CDV-T1-GE3 vs FDS6990AL86Z |
NDH8501NX | Texas Instruments | Check for Price | 2800mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-8 | SI3457CDV-T1-GE3 vs NDH8501NX |
FDR8305N | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 | SI3457CDV-T1-GE3 vs FDR8305N |