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Transistors / Power Field-Effect Transistors / SI3460BDV-T1-E3
Datasheets
SI3460BDV-T1-E3 by:

Power Field-Effect Transistor, 8A I(D), 20V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6

Part Details for SI3460BDV-T1-E3 by Vishay Intertechnologies

Overview of SI3460BDV-T1-E3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics

Price & Stock for SI3460BDV-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI3460BDV-T1-E3
Avnet Americas Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3460BDV-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.3945
  • 6,000 $0.3818
  • 12,000 $0.3691
  • 18,000 $0.3542
  • 24,000 $0.3427
  • 30,000 $0.3266
  • 300,000 $0.3105
$0.3105 / $0.3945 Buy Now
DISTI # 781-SI3460BDV-E3
Mouser Electronics MOSFET 20V 8.0A 3.5W RoHS: Compliant 8247
  • 1 $0.8700
  • 10 $0.7550
  • 100 $0.5230
  • 500 $0.4370
  • 1,000 $0.3720
  • 3,000 $0.3250
  • 6,000 $0.3080
  • 9,000 $0.2900
  • 24,000 $0.2870
$0.2870 / $0.8700 Buy Now
Future Electronics Single N-Channel 20 V 0.027 Ohms Surface Mount Power Mosfet - TSOP-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.3100
  • 6,000 $0.3050
  • 9,000 $0.3000
  • 12,000 $0.3000
  • 15,000 $0.2900
$0.2900 / $0.3100 Buy Now
Future Electronics Single N-Channel 20 V 0.027 Ohms Surface Mount Power Mosfet - TSOP-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.3100
  • 6,000 $0.3050
  • 9,000 $0.3000
  • 12,000 $0.3000
  • 15,000 $0.2900
$0.2900 / $0.3100 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 20V, 0.027OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 2700
  • 1 $0.6459
  • 140 $0.3014
  • 665 $0.2691
$0.2691 / $0.6459 Buy Now
DISTI # SI3460BDV-T1-E3
TTI MOSFET 20V 8.0A 3.5W pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.3170
  • 6,000 $0.3050
  • 9,000 $0.2990
  • 15,000 $0.2930
  • 30,000 $0.2880
$0.2880 / $0.3170 Buy Now
DISTI # SI3460BDV-T1-E3
Avnet Americas Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3460BDV-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.3945
  • 6,000 $0.3818
  • 12,000 $0.3691
  • 18,000 $0.3542
  • 24,000 $0.3427
  • 30,000 $0.3266
  • 300,000 $0.3105
$0.3105 / $0.3945 Buy Now
DISTI # SI3460BDV-T1-E3
Avnet Americas Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3460BDV-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.3945
  • 6,000 $0.3818
  • 12,000 $0.3691
  • 18,000 $0.3542
  • 24,000 $0.3427
  • 30,000 $0.3266
  • 300,000 $0.3105
$0.3105 / $0.3945 Buy Now
DISTI # SI3460BDV-T1-E3
EBV Elektronik Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R (Alt: SI3460BDV-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 1 Weeks, 3 Days EBV - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 10 2620
  • 10 $0.3800
  • 250 $0.3300
  • 500 $0.3000
  • 1,000 $0.2700
$0.2700 / $0.3800 Buy Now

Part Details for SI3460BDV-T1-E3

SI3460BDV-T1-E3 CAD Models

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SI3460BDV-T1-E3 Part Data Attributes

Parametric Data
SI3460BDV-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI3460BDV-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 8A I(D), 20V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, TSOP-6
Reach Compliance Code compliant
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.5 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI3460BDV-T1-E3

This table gives cross-reference parts and alternative options found for SI3460BDV-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3460BDV-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI3460BDV-T1-E3 TRANSISTOR 8 A, 20 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Power Vishay Siliconix SI3460BDV-T1-E3 vs SI3460BDV-T1-E3
Part Number Description Manufacturer Compare
SI3460BDV-T1-GE3 TRANSISTOR 8 A, 20 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Power Vishay Siliconix SI3460BDV-T1-E3 vs SI3460BDV-T1-GE3

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