Part Details for SI4410DYPBF by International Rectifier
Overview of SI4410DYPBF by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI4410DYPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 19 |
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RFQ | ||
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Quest Components | 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | 6 |
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$1.2000 / $1.4400 | Buy Now |
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Quest Components | 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | 80 |
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$1.2000 / $2.4000 | Buy Now |
Part Details for SI4410DYPBF
SI4410DYPBF CAD Models
SI4410DYPBF Part Data Attributes:
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SI4410DYPBF
International Rectifier
Buy Now
Datasheet
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SI4410DYPBF
International Rectifier
Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | SOIC | |
Package Description | LEAD FREE, SO-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 400 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.0135 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |