Datasheets
SI4466DY-T1-E3 by:

TRANSISTOR 9.5 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power

Part Details for SI4466DY-T1-E3 by Vishay Siliconix

Overview of SI4466DY-T1-E3 by Vishay Siliconix

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Applications Consumer Electronics Internet of Things (IoT) Smart Cities

Price & Stock for SI4466DY-T1-E3

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 7 2485
  • 7 $0.8250
  • 26 $0.5363
  • 95 $0.3094
  • 325 $0.2640
  • 702 $0.2310
  • 1,668 $0.2145
$0.2145 / $0.8250 Buy Now
Quest Components 9.5 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET 589
  • 1 $0.6600
  • 37 $0.4400
  • 137 $0.3080
$0.3080 / $0.6600 Buy Now
Quest Components 9.5 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET 1988
  • 1 $1.1000
  • 110 $0.3300
  • 607 $0.2860
$0.2860 / $1.1000 Buy Now
ES Components SIL SI4466DY-T1-E3 2.5V MSFET 2.5RL 0 in Stock
RFQ

Part Details for SI4466DY-T1-E3

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SI4466DY-T1-E3 Part Data Attributes:

SI4466DY-T1-E3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI4466DY-T1-E3 Vishay Siliconix TRANSISTOR 9.5 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 9.5 A
Drain-source On Resistance-Max 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4466DY-T1-E3

This table gives cross-reference parts and alternative options found for SI4466DY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4466DY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DMN2009LSS-13 Power Field-Effect Transistor, 12A I(D), 20V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Diodes Incorporated SI4466DY-T1-E3 vs DMN2009LSS-13

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