Datasheets
SI4532CDY-T1-GE3 by:

Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Part Details for SI4532CDY-T1-GE3 by Vishay Siliconix

Overview of SI4532CDY-T1-GE3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI4532CDY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 70459541
RS SI4532CDY-T1-GE3 Dual N/P-channel MOSFET Transistor,4.3 A,6 A,30V,8-Pin SOIC | Siliconix / Vishay SI4532CDY-T1-GE3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk 0
  • 2,500 $0.6300
$0.6300 RFQ
New Advantage Corporation N / P-Ch 30 V 6 A 38/73 mOhm SMT (D - S) Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 280000
  • 2,500 $0.2348
$0.2348 Buy Now

Part Details for SI4532CDY-T1-GE3

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SI4532CDY-T1-GE3 Part Data Attributes

SI4532CDY-T1-GE3 Vishay Siliconix
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SI4532CDY-T1-GE3 Vishay Siliconix Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish PURE MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4532CDY-T1-GE3

This table gives cross-reference parts and alternative options found for SI4532CDY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4532CDY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI4532CDY-T1-GE3 Vishay Intertechnologies $0.3538 Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 SI4532CDY-T1-GE3 vs SI4532CDY-T1-GE3
Part Number Manufacturer Composite Price Description Compare
NDS8839H Texas Instruments Check for Price 5700mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET SI4532CDY-T1-GE3 vs NDS8839H
NDS8858H Rochester Electronics LLC Check for Price 6300mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOIC-8 SI4532CDY-T1-GE3 vs NDS8858H
SI4384DY-T1-E3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 SI4532CDY-T1-GE3 vs SI4384DY-T1-E3
FDS8690 Rochester Electronics LLC Check for Price 14000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8 SI4532CDY-T1-GE3 vs FDS8690
NDS8858H Texas Instruments Check for Price 6300mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET SI4532CDY-T1-GE3 vs NDS8858H
SI4430DY Vishay Siliconix Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, SI4532CDY-T1-GE3 vs SI4430DY
SI4532ADY-T1-E3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 SI4532CDY-T1-GE3 vs SI4532ADY-T1-E3
FDS6682 Rochester Electronics LLC Check for Price 14000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 SI4532CDY-T1-GE3 vs FDS6682
NDS8852H Texas Instruments Check for Price 4300mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET SI4532CDY-T1-GE3 vs NDS8852H

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