Datasheets
SI4842DY-T1-E3 by:

Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Part Details for SI4842DY-T1-E3 by Vishay Siliconix

Results Overview of SI4842DY-T1-E3 by Vishay Siliconix

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Applications Consumer Electronics Internet of Things (IoT) Smart Cities

SI4842DY-T1-E3 Information

SI4842DY-T1-E3 by Vishay Siliconix is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for SI4842DY-T1-E3

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SI4842DY-T1-E3 Part Data Attributes

SI4842DY-T1-E3 Vishay Siliconix
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SI4842DY-T1-E3 Vishay Siliconix Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Package Description SO-8
Reach Compliance Code compliant
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for SI4842DY-T1-E3

This table gives cross-reference parts and alternative options found for SI4842DY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4842DY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI4842DY-T1 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 SI4842DY-T1-E3 vs SI4842DY-T1

SI4842DY-T1-E3 Related Parts

SI4842DY-T1-E3 Frequently Asked Questions (FAQ)

  • The recommended PCB layout for the SI4842DY-T1-E3 involves keeping the input and output traces as short as possible, using a solid ground plane, and placing bypass capacitors close to the device. A 4-layer PCB with a dedicated power plane and a dedicated ground plane is also recommended.

  • To ensure proper biasing, the device requires a stable voltage supply, and the input voltage should be within the recommended range. The bias voltage should be applied to the VCC pin, and the input signal should be AC-coupled to the VIN pin. Additionally, the device requires a proper termination at the output.

  • The SI4842DY-T1-E3 has an operating temperature range of -40°C to +125°C. However, it's recommended to operate the device within a temperature range of -20°C to +85°C for optimal performance and reliability.

  • The SI4842DY-T1-E3 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. This includes using an ESD wrist strap, ESD mat, and ESD-safe packaging materials.

  • The recommended soldering profile for the SI4842DY-T1-E3 involves a peak temperature of 260°C, with a dwell time of 10-30 seconds. The device should be soldered using a reflow soldering process, and the soldering temperature should be within the recommended range to prevent damage to the device.

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