Part Details for SI4932DY-T1-GE3 by Vishay Siliconix
Overview of SI4932DY-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI4932DY-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI4932DY-T1-GE3CT-ND
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DigiKey | MOSFET 2N-CH 30V 8A 8SOIC Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
443 In Stock |
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$0.5072 / $1.3500 | Buy Now |
Part Details for SI4932DY-T1-GE3
SI4932DY-T1-GE3 CAD Models
SI4932DY-T1-GE3 Part Data Attributes:
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SI4932DY-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI4932DY-T1-GE3
Vishay Siliconix
MOSFET N-CH DUAL 30V 8-SOIC
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 115 pF | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.2 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 66 ns | |
Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for SI4932DY-T1-GE3
This table gives cross-reference parts and alternative options found for SI4932DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4932DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STS9DNH3LL | 9A, 30V, 0.017ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | STMicroelectronics | SI4932DY-T1-GE3 vs STS9DNH3LL |
DMG4800LSD-13 | Power Field-Effect Transistor, 8.54A I(D), 30V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Diodes Incorporated | SI4932DY-T1-GE3 vs DMG4800LSD-13 |
UT4822-S08-R | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Unisonic Technologies Co Ltd | SI4932DY-T1-GE3 vs UT4822-S08-R |
UT4822L-S08-R | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Unisonic Technologies Co Ltd | SI4932DY-T1-GE3 vs UT4822L-S08-R |
UT4822G-S08-R | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Unisonic Technologies Co Ltd | SI4932DY-T1-GE3 vs UT4822G-S08-R |
SI4932DY-T1-GE3 | Power Field-Effect Transistor, 8A I(D), 30V, 0.015ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Vishay Intertechnologies | SI4932DY-T1-GE3 vs SI4932DY-T1-GE3 |