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Transistors / Small Signal Field-Effect Transistors / SI4936CDY-T1-GE3
Datasheets
SI4936CDY-T1-GE3 by:

Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

Part Details for SI4936CDY-T1-GE3 by Vishay Intertechnologies

Results Overview of SI4936CDY-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy Automotive

SI4936CDY-T1-GE3 Information

SI4936CDY-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI4936CDY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 55R1929
Newark Mosfet, N-Ch, 30 V, 5.8A, Soic, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:5.8A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Vishay SI4936CDY-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 110
  • 1 $0.6550
  • 10 $0.5700
  • 25 $0.5160
  • 50 $0.4630
  • 100 $0.4090
$0.4090 / $0.6550 Buy Now
DISTI # 15R5130
Newark Dual Mosfet, Dual N Channel, 5.8 A, 30 V, 33 Mohm, 10 V, 3 V |Vishay SI4936CDY-T1-GE3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.2820
  • 5,000 $0.2760
  • 10,000 $0.2550
  • 20,000 $0.2370
  • 30,000 $0.2210
  • 50,000 $0.2120
$0.2120 / $0.2820 Buy Now
DISTI # SI4936CDY-T1-GE3
Avnet Americas DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4936CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 6000
  • 1 $0.1896
$0.1896 Buy Now
DISTI # SI4936CDY-T1-GE3
Avnet Americas DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4936CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.2450
  • 5,000 $0.1968
  • 10,000 $0.1937
  • 15,000 $0.1905
  • 20,000 $0.1882
$0.1882 / $0.2450 Buy Now
DISTI # SI4936CDY-T1-GE3
TME Transistor: N-MOSFET x2, TrenchFET®, unipolar, 30V, 4.6A, Idm: 20A Min Qty: 1 1450
  • 1 $0.6910
  • 10 $0.4600
  • 50 $0.3960
  • 100 $0.3160
  • 500 $0.3100
$0.3100 / $0.6910 Buy Now
DISTI # SI4936CDY-T1-GE3
Avnet Asia DUAL N-CHANNEL 30-V (D-S) MOSFET (Alt: SI4936CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days 0
RFQ
CHIPMALL.COM LIMITED 30V 5A 0.04@10V,5A 1.7W 3V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS 11029
  • 1 $0.3700
$0.3700 Buy Now
DISTI # SI4936CDY-T1-GE3
EBV Elektronik DUAL N-CHANNEL 30-V (D-S) MOSFET (Alt: SI4936CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 5A 0.0410V5A 1.7W 3V250uA 2 N-Channel SOIC-8 MOSFETs ROHS 32
  • 1 $0.4806
  • 10 $0.4256
  • 30 $0.3990
  • 100 $0.3723
  • 500 $0.3565
  • 1,000 $0.3487
$0.3487 / $0.4806 Buy Now

Part Details for SI4936CDY-T1-GE3

SI4936CDY-T1-GE3 CAD Models

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SI4936CDY-T1-GE3 Part Data Attributes

Parametric Data
SI4936CDY-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4936CDY-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.8 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.3 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

SI4936CDY-T1-GE3 Related Parts

SI4936CDY-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI4936CDY-T1-GE3 is a standard SOIC-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note AN81193.

  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. Typically, this includes a supply voltage (VCC) of 2.5V to 5.5V, and a bias current (Icc) of 1mA to 10mA. Additionally, ensure the input signals are within the recommended voltage range (Vin) of 0V to VCC.

  • The maximum operating frequency of the SI4936CDY-T1-GE3 is 100 MHz. However, the actual operating frequency may be limited by the specific application, PCB layout, and signal integrity considerations.

  • The SI4936CDY-T1-GE3 has a maximum junction temperature (Tj) of 150°C. To ensure reliable operation, maintain a safe operating temperature by providing adequate heat dissipation through the PCB design, thermal vias, and/or heat sinks as needed.

  • Yes, the SI4936CDY-T1-GE3 has built-in ESD protection, but it's still important to follow proper ESD handling and storage procedures to prevent damage. Additionally, consider adding external ESD protection devices or circuitry as needed, depending on the application and environment.

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