Part Details for SI7107DN-T1-E3 by Vishay Intertechnologies
Overview of SI7107DN-T1-E3 by Vishay Intertechnologies
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI7107DN-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2335073
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Farnell | MOSFET, P CH, -20V, -9.8A, POWERPAK 1212 RoHS: Compliant Min Qty: 3000 Lead time: 37 Weeks, 1 Days Container: Reel | 0 |
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$0.7911 / $1.3311 | Buy Now |
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DISTI #
2335348
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Farnell | MOSFET, P CH, -20V, -9.8A, POWERPAK 1212 RoHS: Compliant Min Qty: 1 Lead time: 31 Weeks, 1 Days Container: Each | 0 |
|
$0.7911 / $2.3482 | Buy Now |
Part Details for SI7107DN-T1-E3
SI7107DN-T1-E3 CAD Models
SI7107DN-T1-E3 Part Data Attributes
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SI7107DN-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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SI7107DN-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 9.8A I(D), 20V, 0.0108ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, 1212-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT, LEADLESS, POWERPAK, 1212-8 | |
| Reach Compliance Code | compliant | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 9.8 A | |
| Drain-source On Resistance-Max | 0.0108 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.8 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |