Part Details for SI7110DN-T1-GE3 by Vishay Intertechnologies
Results Overview of SI7110DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
SI7110DN-T1-GE3 Information
SI7110DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
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|---|---|---|---|
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| TLK106RHBT | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
| SN65LVCP1414RLJT | Texas Instruments | 14.2-GBPS Quad Channel, Dual Mode Linear Equalizer 38-WQFN -40 to 85 |
Price & Stock for SI7110DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
16P3821
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Newark | N Ch Mosfet, 20V, 21.1A, Powerpak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:21.1A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Power Dissipation:1.5W Rohs Compliant: Yes |Vishay SI7110DN-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.9450 / $0.9750 | Buy Now |
|
DISTI #
SI7110DN-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 20V 13.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7110DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.8235 / $0.8771 | Buy Now |
Part Details for SI7110DN-T1-GE3
SI7110DN-T1-GE3 CAD Models
SI7110DN-T1-GE3 Part Data Attributes
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SI7110DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SI7110DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 13.5A I(D), 20V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 61 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 13.5 A | |
| Drain-source On Resistance-Max | 0.0053 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.8 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |