Part Details for SI7112DN-T1-GE3 by Vishay Intertechnologies
Overview of SI7112DN-T1-GE3 by Vishay Intertechnologies
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Price & Stock for SI7112DN-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
781-SI7112DN-T1-GE3
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Mouser Electronics | MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V RoHS: Compliant | 2976 |
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$0.8040 / $1.6800 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.6270 | Buy Now |
DISTI #
SI7112DN-T1-GE3
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TTI | MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.8400 / $0.8500 | Buy Now |
Part Details for SI7112DN-T1-GE3
SI7112DN-T1-GE3 CAD Models
SI7112DN-T1-GE3 Part Data Attributes
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SI7112DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SI7112DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 11.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8 | |
Reach Compliance Code | not_compliant | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 11.3 A | |
Drain-source On Resistance-Max | 0.0075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.8 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |