Part Details for SI7112DN-T1-GE3 by Vishay Siliconix
Overview of SI7112DN-T1-GE3 by Vishay Siliconix
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Price & Stock for SI7112DN-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7112DN-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 11.3A PPAK1212-8 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
13268 In Stock |
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$0.7059 / $1.6800 | Buy Now |
Part Details for SI7112DN-T1-GE3
SI7112DN-T1-GE3 CAD Models
SI7112DN-T1-GE3 Part Data Attributes
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SI7112DN-T1-GE3
Vishay Siliconix
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Datasheet
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SI7112DN-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R
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Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, S-XDSO-C5 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 11.3 A | |
Drain-source On Resistance-Max | 0.0075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.8 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |