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Transistors / Power Field-Effect Transistors / SI7117DN-T1-GE3
Datasheets
SI7117DN-T1-GE3 by:

Power Field-Effect Transistor, 1.1A I(D), 150V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

Part Details for SI7117DN-T1-GE3 by Vishay Intertechnologies

Overview of SI7117DN-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI7117DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI7117DN-T1-GE3
Avnet Americas P-CHANNEL 150-V (D-S) MOSFET - Tape and Reel (Alt: SI7117DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5184
  • 6,000 $0.4674
  • 12,000 $0.4601
  • 18,000 $0.4524
  • 24,000 $0.4471
$0.4471 / $0.5184 Buy Now
CHIPMALL.COM LIMITED 150V 1.1A 1.2@10V,1.1A 3.2W 2.5V@250uA 1 Piece P-Channel PowerPAK1212-8 MOSFETs ROHS 2623
  • 1 $0.4061
  • 10 $0.3596
  • 30 $0.3372
  • 100 $0.3147
  • 500 $0.3013
  • 1,000 $0.2938
$0.2938 / $0.4061 Buy Now
DISTI # SI7117DN-T1-GE3
EBV Elektronik P-CHANNEL 150-V (D-S) MOSFET (Alt: SI7117DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 150V 1.1A 1.210V1.1A 3.2W 2.5V250uA 1 Piece P-Channel PowerPAK1212-8 MOSFETs ROHS 2623
  • 1 $0.4230
  • 10 $0.3746
  • 30 $0.3512
  • 100 $0.3278
  • 500 $0.3138
  • 1,000 $0.3060
$0.3060 / $0.4230 Buy Now

Part Details for SI7117DN-T1-GE3

SI7117DN-T1-GE3 CAD Models

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SI7117DN-T1-GE3 Part Data Attributes

Parametric Data
SI7117DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7117DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 1.1A I(D), 150V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 1.01 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 1.1 A
Drain-source On Resistance-Max 1.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 12.5 W
Pulsed Drain Current-Max (IDM) 2.2 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI7117DN-T1-GE3

This table gives cross-reference parts and alternative options found for SI7117DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7117DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI7117DN-T1-E3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 1.1A I(D), 150V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 SI7117DN-T1-GE3 vs SI7117DN-T1-E3

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