-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SI7148DP-T1-GE3 by Vishay Intertechnologies
Overview of SI7148DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Industrial Automation
Computing and Data Storage
Electronic Manufacturing
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| TLK106RHBR | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
| TLK106RHBT | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
| SN65LVCP1414RLJT | Texas Instruments | 14.2-GBPS Quad Channel, Dual Mode Linear Equalizer 38-WQFN -40 to 85 |
Price & Stock for SI7148DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
15R5178
|
Newark | N Channel Mosfet, 75V, 28A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:28A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SI7148DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.3600 / $1.6500 | Buy Now |
|
DISTI #
26R1912
|
Newark | N Channel Mosfet, 75V, 28A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:28A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SI7148DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.8500 | Buy Now |
|
DISTI #
SI7148DP-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 75V 28A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7148DP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$1.2353 / $1.3125 | Buy Now |
|
DISTI #
SI7148DP-T1-GE3
|
Avnet Asia | Trans MOSFET N-CH 75V 28A 8-Pin PowerPAK SO T/R (Alt: SI7148DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days | 0 |
|
RFQ | |
|
DISTI #
C1S803604223938
|
Chip1Stop | Trans MOSFET N-CH 75V 28A 8-Pin PowerPAK SO T/R RoHS: Compliant pbFree: Yes Container: Cut Tape | 2923 |
|
$1.2800 / $1.3000 | Buy Now |
|
DISTI #
SI7148DP-T1-GE3
|
EBV Elektronik | Trans MOSFET N-CH 75V 28A 8-Pin PowerPAK SO T/R (Alt: SI7148DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
LCSC | 75V 28A 0.01110V28A 5.4W 2V5mA 1 N-channel PowerPAK-SO-8 MOSFETs ROHS | 4 |
|
$2.0731 / $3.0923 | Buy Now |
Part Details for SI7148DP-T1-GE3
SI7148DP-T1-GE3 CAD Models
SI7148DP-T1-GE3 Part Data Attributes
|
|
SI7148DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI7148DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | POWERPAK SO-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 96 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | YES | |
| Terminal Finish | Pure Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 96 ns |