Datasheets
SI7157DP-T1-GE3 by:

Power Field-Effect Transistor, 60A I(D), 20V, 0.0016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8

Part Details for SI7157DP-T1-GE3 by Vishay Intertechnologies

Results Overview of SI7157DP-T1-GE3 by Vishay Intertechnologies

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

SI7157DP-T1-GE3 Information

SI7157DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI7157DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 29X6571
Newark Mosfet, P Channel, -20V, -60A, Powerpak So-8, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.4V Rohs Compliant: Yes |Vishay SI7157DP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 508
  • 1 $1.7400
  • 10 $1.2100
  • 25 $1.1200
  • 50 $1.0300
  • 100 $0.9320
$0.9320 / $1.7400 Buy Now
DISTI # 99W9627
Newark Mosfet, P Channel, -20V, -60A, Powerpak So-8, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.4V Rohs Compliant: Yes |Vishay SI7157DP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.8030
  • 1,000 $0.7720
  • 2,000 $0.7010
  • 4,000 $0.6290
  • 6,000 $0.6070
  • 10,000 $0.5940
$0.5940 / $0.8030 Buy Now
DISTI # SI7157DP-T1-GE3
Avnet Americas P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI7157DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 3000
  • 3,000 $0.5782
  • 6,000 $0.5753
  • 12,000 $0.5400
  • 18,000 $0.5310
  • 24,000 $0.5247
$0.5247 / $0.5782 Buy Now
DISTI # 29X6571
Avnet Americas P-CHANNEL 20-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 29X6571) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 4 Days Container: Ammo Pack 508 Partner Stock
  • 1 $1.6000
  • 10 $1.1900
  • 25 $1.0800
  • 50 $0.9660
  • 100 $0.8510
$0.8510 / $1.6000 Buy Now
DISTI # SI7157DP-T1-GE3
Avnet Asia P-CHANNEL 20-V (D-S) MOSFET (Alt: SI7157DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days 0
RFQ
DISTI # SI7157DP-T1-GE3
EBV Elektronik PCHANNEL 20V DS MOSFET (Alt: SI7157DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days EBV - 3000
Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 2460
  • 100 $10.2900
  • 500 $8.5700
  • 1,000 $6.8600
$6.8600 / $10.2900 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 3000
  • 3,000 $0.9742
$0.9742 Buy Now

Part Details for SI7157DP-T1-GE3

SI7157DP-T1-GE3 CAD Models

SI7157DP-T1-GE3 Part Data Attributes

SI7157DP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7157DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 60A I(D), 20V, 0.0016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks, 4 Days
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 61.25 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.0016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 300 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

SI7157DP-T1-GE3 Related Parts

SI7157DP-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI7157DP-T1-GE3 is a standard QFN16 package with a 3x3 mm body size and 0.5 mm pitch. A recommended land pattern is available in the Vishay Intertechnologies application note 'QFN16 Land Pattern' (document number: 81011).

  • To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Vishay Intertechnologies application note 'Soldering Guidelines for QFN Packages' (document number: 81012). Additionally, use a solder paste with a melting point between 217°C to 220°C and a peak temperature of 240°C to 250°C.

  • The SI7157DP-T1-GE3 has an operating temperature range of -40°C to 150°C. However, the device can be stored at temperatures between -55°C to 150°C.

  • Handle the SI7157DP-T1-GE3 by the package body only, avoiding touching the leads or electrical contacts. Store the devices in their original packaging or in a dry, ESD-protected environment at a temperature range of -40°C to 30°C and relative humidity below 60%.

  • The SI7157DP-T1-GE3 has an integrated ESD protection circuit, but it is still recommended to follow standard ESD handling and storage procedures to prevent damage. Use an ESD wrist strap or mat, and ensure all equipment and tools are properly grounded.

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