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Part Details for SI7178DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SI7178DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7178DP-T1-GE3 Information
SI7178DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7178DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84W7288
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Newark | Mosfet, N Channel, 100V, 0.0114Ohm, 60A, Powerpak So, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI7178DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.4700 / $1.7900 | Buy Now |
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DISTI #
16P3830
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Newark | N Channel Mosfet, 100V, 60A, Powerpak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Vishay SI7178DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$2.0200 | Buy Now |
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DISTI #
SI7178DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7178DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$1.3412 / $1.4250 | Buy Now |
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DISTI #
SI7178DP-T1-GE3
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Avnet Asia | Trans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R (Alt: SI7178DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | 0 |
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RFQ | |
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DISTI #
SI7178DP-T1-GE3
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EBV Elektronik | Trans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R (Alt: SI7178DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | EBV - 3000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 3000 |
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$2.3700 | Buy Now |
Part Details for SI7178DP-T1-GE3
SI7178DP-T1-GE3 CAD Models
SI7178DP-T1-GE3 Part Data Attributes
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SI7178DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7178DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 14.9 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |