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Transistors / Power Field-Effect Transistors / SI7212DN-T1-GE3
Datasheets
SI7212DN-T1-GE3 by:

Power Field-Effect Transistor, 4.9A I(D), 30V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8

Part Details for SI7212DN-T1-GE3 by Vishay Intertechnologies

Results Overview of SI7212DN-T1-GE3 by Vishay Intertechnologies

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SI7212DN-T1-GE3 Information

SI7212DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

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Price & Stock for SI7212DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 57AJ0459
Newark Mosfet, Dual/N-Ch/30V/4.9A/Powerpak 1212 Rohs Compliant: Yes |Vishay SI7212DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2720
  • 1 $1.6800
  • 10 $1.6000
  • 25 $1.5100
  • 50 $1.4200
  • 100 $1.3400
$1.3400 / $1.6800 Buy Now
DISTI # 33P5385
Newark Mosfet, Dual N Channel, 30V, 4.9A, Powerpak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:4.9A, No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI7212DN-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $1.3200
  • 4,000 $1.1900
  • 6,000 $1.1500
  • 10,000 $1.1000
$1.1000 / $1.3200 Buy Now
DISTI # SI7212DN-T1-GE3
Avnet Americas Transistor MOSFET Array Dual N-CH 30V 4.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7212DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.0750
  • 6,000 $1.0578
  • 12,000 $1.0412
  • 18,000 $1.0238
  • 24,000 $1.0118
$1.0118 / $1.0750 Buy Now
Bristol Electronics   94
RFQ
DISTI # SI7212DN-T1-GE3
IBS Electronics SI7212DN-T1-GE3 Vishay Mosfet Array Dual N-Channel30V 4.9A 1.3W PowerPAK 1212-8 Dual RoHS Min Qty: 325 Package Multiple: 1 325
  • 325 $0.9685
$0.9685 Buy Now
DISTI # SI7212DN-T1-GE3
EBV Elektronik Transistor MOSFET Array Dual N-CH 30V 4.9A 8-Pin PowerPAK 1212 T/R (Alt: SI7212DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI7212DN-T1-GE3

SI7212DN-T1-GE3 CAD Models

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SI7212DN-T1-GE3 Part Data Attributes

Parametric Data
SI7212DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7212DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 4.9A I(D), 30V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, 1212-8, POWERPAK-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 5 mJ
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.9 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.6 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

SI7212DN-T1-GE3 Related Parts

SI7212DN-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI7212DN-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.

  • To ensure proper biasing, connect the VCC pin to a stable 2.5V to 5.5V power supply, and the GND pin to a solid ground plane. Additionally, decouple the VCC pin with a 10nF to 100nF capacitor to reduce noise and ensure stable operation.

  • The maximum allowed current through the SI7212DN-T1-GE3's output pins is 20mA. Exceeding this limit may cause damage to the device or affect its reliability.

  • To protect the SI7212DN-T1-GE3 from ESD and overvoltage, use a TVS diode or a transient voltage suppressor on the input pins. Additionally, consider adding a series resistor and a capacitor to the input pins to filter out noise and transients.

  • The SI7212DN-T1-GE3 is rated for operation from -40°C to 125°C. However, the device's performance and reliability may degrade at extreme temperatures. Ensure proper thermal management and consider derating the device's specifications for high-temperature applications.

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