Part Details for SI7234DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SI7234DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7234DP-T1-GE3 Information
SI7234DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7234DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
57AJ0463
|
Newark | Mosfet, Dual, N-Ch, 12V, 60A/Powerpak So Rohs Compliant: Yes |Vishay SI7234DP-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 12429 |
|
$1.8800 / $3.5000 | Buy Now |
|
DISTI #
16P3837
|
Newark | Dual N Channel Mosfet, 12V, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:12V, Drain Source Voltage Vds P Channel:12V, Continuous Drain Current Id N Channel:60A, Continuous Drain Current Id P Channel:60Arohs Compliant: Yes |Vishay SI7234DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.3700 / $1.6700 | Buy Now |
|
DISTI #
SI7234DP-T1-GE3
|
Avnet Americas | DUAL N-CHANNEL 12-V (D-S) MOSFET - Tape and Reel (Alt: SI7234DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$1.2471 / $1.3250 | Buy Now |
|
|
Chip-Germany GmbH | RoHS: Not Compliant | 380 |
|
RFQ | |
|
DISTI #
SI7234DP-T1-GE3
|
EBV Elektronik | DUAL N-CHANNEL 12-V (D-S) MOSFET (Alt: SI7234DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SI7234DP-T1-GE3
SI7234DP-T1-GE3 CAD Models
SI7234DP-T1-GE3 Part Data Attributes
|
|
SI7234DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI7234DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 24.8A I(D), 12V, 0.005ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 24.8 A | |
| Drain-source On Resistance-Max | 0.005 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 46 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |