Part Details for SI7288DP-T1-GE3 by Vishay Intertechnologies
Overview of SI7288DP-T1-GE3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI7288DP-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63R8227
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Newark | Mosfet, Dual N Channel, 40V, 20A, Powerpak So-8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:40V, Drain Source Voltage Vds P Channel:40V, Continuous Drain Current Id N Channel:20A, No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI7288DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5860 / $0.6910 | Buy Now |
DISTI #
05AC7749
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Newark | Mosfet, Dual N-Ch, 40V, 20A, Powerpak So, Channel Type:N Channel, Drain Source Voltage Vds N Channel:40V, Drain Source Voltage Vds P Channel:40V, Continuous Drain Current Id N Channel:20A, Continuous Drain Current Id P Channel:20A Rohs Compliant: Yes |Vishay SI7288DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.8630 | Buy Now |
DISTI #
SI7288DP-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 40V 20A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7288DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 39000 |
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$0.5676 / $0.6248 | Buy Now |
DISTI #
SI7288DP-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 40V 20A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7288DP-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$0.5940 / $0.7348 | Buy Now |
DISTI #
781-SI7288DP-T1-GE3
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Mouser Electronics | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 53231 |
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$0.5520 / $1.3800 | Buy Now |
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Future Electronics | Dual N-Channel 40 V 0.019 Ohm Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 21000Reel |
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$0.5550 / $0.5750 | Buy Now |
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Future Electronics | Dual N-Channel 40 V 0.019 Ohm Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5550 / $0.5750 | Buy Now |
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Bristol Electronics | 3000 |
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RFQ | ||
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Quest Components | 10A, 40V, 0.019OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET | 2400 |
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$0.6132 / $2.0440 | Buy Now |
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Quest Components | 10A, 40V, 0.019OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET | 2344 |
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$1.1535 / $3.0760 | Buy Now |
Part Details for SI7288DP-T1-GE3
SI7288DP-T1-GE3 CAD Models
SI7288DP-T1-GE3 Part Data Attributes
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SI7288DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7288DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 10A I(D), 40V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
Reach Compliance Code | not_compliant | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 5 mJ | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.019 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C6 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 15.6 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Pure Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |