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Transistors / Power Field-Effect Transistors / SI7370DP-T1-GE3
Datasheets
SI7370DP-T1-GE3 by:

Power Field-Effect Transistor, 9.6A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

Part Details for SI7370DP-T1-GE3 by Vishay Intertechnologies

Overview of SI7370DP-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for SI7370DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI7370DP-T1-GE3
Avnet Americas Trans MOSFET N-CH 60V 9.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7370DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.6979
  • 6,000 $1.6434
  • 12,000 $1.5890
  • 18,000 $1.5246
  • 24,000 $1.4751
  • 30,000 $1.4058
  • 300,000 $1.3365
$1.3365 / $1.6979 Buy Now
DISTI # 781-SI7370DP-GE3
Mouser Electronics MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant 47115
  • 1 $2.5700
  • 10 $2.1400
  • 100 $1.7000
  • 250 $1.5700
  • 500 $1.4300
  • 1,000 $1.2200
  • 3,000 $1.1700
$1.1700 / $2.5700 Buy Now
Future Electronics 60V,15.8A,11Mohm RdsOn@10V,46nCQg,PPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $1.1600
$1.1600 Buy Now
Future Electronics 60V,15.8A,11Mohm RdsOn@10V,46nCQg,PPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $1.1600
$1.1600 Buy Now
DISTI # SI7370DP-T1-GE3
TTI MOSFET 60V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 6000
In Stock
  • 3,000 $1.1600
$1.1600 Buy Now
DISTI # SI7370DP-T1-GE3
Avnet Americas Trans MOSFET N-CH 60V 9.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7370DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.6979
  • 6,000 $1.6434
  • 12,000 $1.5890
  • 18,000 $1.5246
  • 24,000 $1.4751
  • 30,000 $1.4058
  • 300,000 $1.3365
$1.3365 / $1.6979 Buy Now
DISTI # SI7370DP-T1-GE3
Avnet Americas Trans MOSFET N-CH 60V 9.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7370DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.6979
  • 6,000 $1.6434
  • 12,000 $1.5890
  • 18,000 $1.5246
  • 24,000 $1.4751
  • 30,000 $1.4058
  • 300,000 $1.3365
$1.3365 / $1.6979 Buy Now
DISTI # SI7370DP-T1-GE3
EBV Elektronik Trans MOSFET N-CH 60V 9.6A 8-Pin PowerPAK SO T/R (Alt: SI7370DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 1 Weeks, 3 Days EBV - 0
Buy Now

Part Details for SI7370DP-T1-GE3

SI7370DP-T1-GE3 CAD Models

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SI7370DP-T1-GE3 Part Data Attributes

Parametric Data
SI7370DP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7370DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 9.6A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Reach Compliance Code compliant
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 9.6 A
Drain-source On Resistance-Max 0.011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 5.2 W
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish PURE MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI7370DP-T1-GE3

This table gives cross-reference parts and alternative options found for SI7370DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7370DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI7460DP-T1-E3 Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7370DP-T1-GE3 vs SI7460DP-T1-E3
SI7460DP-T1-GE3 Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7370DP-T1-GE3 vs SI7460DP-T1-GE3
SI7370DP-T1-E3 Power Field-Effect Transistor, 9.6A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7370DP-T1-GE3 vs SI7370DP-T1-E3

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