Datasheets
SI7370DP-T1-GE3 by:

Trans MOSFET N-CH 60V 9.6A 8-Pin PowerPAK SO T/R

Part Details for SI7370DP-T1-GE3 by Vishay Siliconix

Overview of SI7370DP-T1-GE3 by Vishay Siliconix

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for SI7370DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI7370DP-T1-GE3CT-ND
DigiKey MOSFET N-CH 60V 9.6A PPAK SO-8 Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3979
In Stock
  • 1 $2.9500
  • 10 $2.4500
  • 100 $1.9498
  • 500 $1.6498
  • 1,000 $1.3999
  • 3,000 $1.3299
  • 6,000 $1.2799
$1.2799 / $2.9500 Buy Now

Part Details for SI7370DP-T1-GE3

SI7370DP-T1-GE3 CAD Models

SI7370DP-T1-GE3 Part Data Attributes

SI7370DP-T1-GE3 Vishay Siliconix
Buy Now Datasheet
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SI7370DP-T1-GE3 Vishay Siliconix Trans MOSFET N-CH 60V 9.6A 8-Pin PowerPAK SO T/R
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-XDSO-C5
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 9.6 A
Drain-source On Resistance-Max 0.011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 5.2 W
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish PURE MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI7370DP-T1-GE3

This table gives cross-reference parts and alternative options found for SI7370DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7370DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI7370DP-T1-GE3 Power Field-Effect Transistor, 9.6A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7370DP-T1-GE3 vs SI7370DP-T1-GE3
Part Number Description Manufacturer Compare
SI7460DP-T1-E3 Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7370DP-T1-GE3 vs SI7460DP-T1-E3
SI7370DP-T1-GE3 Power Field-Effect Transistor, 9.6A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7370DP-T1-GE3 vs SI7370DP-T1-GE3
SI7460DP-T1-GE3 Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7370DP-T1-GE3 vs SI7460DP-T1-GE3
SI7370DP-T1-E3 Power Field-Effect Transistor, 9.6A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7370DP-T1-GE3 vs SI7370DP-T1-E3

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